High Performance Ternary Organic Phototransistors with Photoresponse up to 2600 nm at Room Temperature,Advanced Functional Materials

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High Performance Ternary Organic Phototransistors with Photoresponse up to 2600 nm at Room Temperature
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2021-07-08 , DOI: 10.1002/adfm.202103787
Ben Yang ₁ , Yan Wang ₁ , Li Li ₁ , Junyao Zhang ₁ , Jianlu Wang ₂ , Hanxue Jiao ₃ , Dandan Hao ₁ , Pu Guo ₁ , Sheng Zeng ₁ , Zhekun Hua ₁ , Jia Huang _{1,

4}

Affiliation

Infrared (IR) photodetection is important for light communications, military, agriculture, and related fields. Organic transistors are investigated as photodetectors. However, due to their large band gap, most organic transistors can only respond to ultraviolet and visible light. Here high performance IR phototransistors with ternary semiconductors of organic donor/acceptor complex and semiconducting single-walled carbon nanotubes (SWCNTs), without deep cooling requirements are developed. Due to both the ultralow intermolecular electronic transition energy of the complex and charge transport properties of SWCNTs, the phototransistor realizes broadband photodetection with photoresponse up to 2600 nm. Moreover, it exhibits outstanding performance under 2000 nm light with photoresponsivity of 2.75 × 10⁶ A W⁻¹, detectivity of 3.12 × 10¹⁴ Jones, external quantum efficiency over 10⁸%, and high I_photo/I_dark ratio of 6.8 × 10⁵. The device exhibits decent photoresponse to IR light even under ultra-weak light intensity of 100 nW cm⁻². The response of the phototransistor to blackbody irradiation is demonstrated, which is rarely reported for organic phototransistors. Interestingly, under visible light, the device can also be employed as synaptic devices, and important basic functions are realized. This strategy provides a new guide for developing high performance IR optoelectronics based on organic transistors.

中文翻译：

在室温下具有高达 2600 nm 光响应的高性能三元有机光电晶体管

红外 (IR) 光电探测对于光通信、军事、农业和相关领域很重要。有机晶体管被研究作为光电探测器。然而，由于带隙较大，大多数有机晶体管只能对紫外光和可见光做出响应。这里开发了具有有机供体/受体复合物的三元半导体和半导体单壁碳纳米管 (SWCNT) 的高性能红外光电晶体管，无需深度冷却。由于复合物的超低分子间电子跃迁能和单壁碳纳米管的电荷传输特性，光电晶体管实现了宽带光电探测，光响应可达 2600 nm。此外，它在 2000 nm 光下表现出优异的性能，光响应率为 2.75 × 10⁶ A W ^-1，探测率为3.12 × 10 ¹⁴ Jones，外量子效率超过10 ⁸ %，高I _photo / I_暗比为6.8 × 10 ⁵。即使在 100 nW cm ^{-2 的}超弱光强度下，该器件也对红外光表现出良好的光响应. 证明了光电晶体管对黑体辐射的响应，这在有机光电晶体管中鲜有报道。有趣的是，在可见光下，该装置还可以用作突触装置，实现重要的基本功能。该策略为开发基于有机晶体管的高性能红外光电子学提供了新的指导。

更新日期：2021-07-08

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