通过退火和电子束辐照对二维材料进行无化学掺杂掺杂,Advanced Electronic Materials

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通过退火和电子束辐照对二维材料进行无化学掺杂掺杂
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2021-07-02 , DOI: 10.1002/aelm.202100449
Min Sup Choi _{1,

2} , Myeongjin Lee ₁ , Tien Dat Ngo ₁ , James Hone ₂ , Won Jong Yoo ₁

Affiliation

掺杂是形成互补金属氧化物半导体 (CMOS) 的关键技术，CMOS 是当前最先进半导体器件的基本构建块。然而，传统的掺杂方法（例如离子注入）不适用于 2D 材料，因为它们超薄以适应替代掺杂的原子结构，并且容易受到高能离子轰击。化学掺杂方法已广泛用于二维材料以诱导电荷交换转移；然而，它们会受到表面污染的影响，这对高质量的半导体器件加工是有害的。在这项工作中，作者揭示了无化学品掺杂的影响，其中退火通过氧原子的物理吸附和取代诱导 p 掺杂效应，而电子束辐射选择性地 n 掺杂 MoTe_图2，基于通过电学表征和开尔文探针力显微镜获得的结果。退火增加了经历氧化的 MoTe ₂的功函数，如在表面电位的降低和转移曲线向 p 型行为的转变中所观察到的。电子束照射后的电测量和表面电位的显着降低表明产生了导致 n 掺杂效应的俘获电荷。随后，作者制造了一个 CMOS 反相器，由 MoTe ₂的独特 p 和 n 掺杂区域组成。

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Chemical Dopant-Free Doping by Annealing and Electron Beam Irradiation on 2D Materials

Doping is a key technique for forming complementary metal-oxide-semiconductor (CMOS) that is a basic building block for current state-of-the-art semiconductor devices. However, conventional doping methods such as ion implantation are unsuitable for 2D materials due to their ultra-thinness to accommodate substitutionally doped atomic structures and vulnerability to high energy ion bombardment. Chemical doping methods have been widely used for 2D materials to induce a charge exchange transfer; however, they are subjected to surface contamination which can be detrimental for high quality semiconductor device processing. In this work, the authors reveal the effects of chemicals-free doping in which annealing induces a p-doping effect by physisorption and substitution of oxygen atoms while electron beam irradiation selectively n-dopes MoTe₂, based on the results obtained by electrical characterization and Kelvin probe force microscopy. The annealing increases work-function of MoTe₂ which undergoes oxidation as observed in the reduction of surface potential and the transition of transfer curves toward the p-type behavior. Electrical measurements and a significant reduction in surface potential after electron beam irradiation indicate the generation of trapped charges which is responsible for the n-doping effect. Subsequently, the authors fabricate a CMOS inverter consisting of distinctively p- and n-doped areas of MoTe₂.

更新日期：2021-07-02

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