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Defects in ferroelectric HfO2
Nanoscale ( IF 5.8 ) Pub Date : 2021-06-17 , DOI: 10.1039/d1nr01260f Anastasia Chouprik 1 , Dmitrii Negrov , Evgeny Y Tsymbal , Andrei Zenkevich
Nanoscale ( IF 5.8 ) Pub Date : 2021-06-17 , DOI: 10.1039/d1nr01260f Anastasia Chouprik 1 , Dmitrii Negrov , Evgeny Y Tsymbal , Andrei Zenkevich
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The discovery of ferroelectricity in polycrystalline thin films of doped HfO2 has reignited the expectations of developing competitive ferroelectric non-volatile memory devices. To date, it is widely accepted that the performance of HfO2-based ferroelectric devices during their life cycle is critically dependent on the presence of point defects as well as structural phase polymorphism, which mainly originates from defects either. The purpose of this review article is to overview the impact of defects in ferroelectric HfO2 on its functional properties and the resulting performance of memory devices. Starting from the brief summary of defects in classical perovskite ferroelectrics, we then introduce the known types of point defects in dielectric HfO2 thin films. Further, we discuss main analytical techniques used to characterize the concentration and distribution of defects in doped ferroelectric HfO2 thin films as well as at their interfaces with electrodes. The main part of the review is devoted to the recent experimental studies reporting the impact of defects in ferroelectric HfO2 structures on the performance of different memory devices. We end up with the summary and perspectives of HfO2-based ferroelectric competitive non-volatile memory devices.
中文翻译：
铁电 HfO2 的缺陷
在掺杂 HfO 2 的多晶薄膜中发现铁电性重新点燃了开发具有竞争力的铁电非易失性存储器件的期望。迄今为止，人们普遍认为，基于HfO 2的铁电器件在其生命周期中的性能严重依赖于点缺陷的存在以及主要源自缺陷的结构相多态性。这篇评论文章的目的是概述铁电 HfO 2 中的缺陷对其功能特性和由此产生的存储设备性能的影响。从经典钙钛矿铁电体缺陷的简要总结开始，我们介绍了介电 HfO 中已知类型的点缺陷2薄膜。此外，我们讨论了用于表征掺杂铁电 HfO 2薄膜及其与电极界面处缺陷浓度和分布的主要分析技术。评论的主要部分致力于最近的实验研究，报告铁电 HfO 2结构中的缺陷对不同存储器件性能的影响。我们最终得到了基于HfO 2的铁电竞争性非易失性存储器件的总结和展望。
更新日期：2021-06-30
中文翻译：
铁电 HfO2 的缺陷
在掺杂 HfO 2 的多晶薄膜中发现铁电性重新点燃了开发具有竞争力的铁电非易失性存储器件的期望。迄今为止，人们普遍认为，基于HfO 2的铁电器件在其生命周期中的性能严重依赖于点缺陷的存在以及主要源自缺陷的结构相多态性。这篇评论文章的目的是概述铁电 HfO 2 中的缺陷对其功能特性和由此产生的存储设备性能的影响。从经典钙钛矿铁电体缺陷的简要总结开始，我们介绍了介电 HfO 中已知类型的点缺陷2薄膜。此外，我们讨论了用于表征掺杂铁电 HfO 2薄膜及其与电极界面处缺陷浓度和分布的主要分析技术。评论的主要部分致力于最近的实验研究，报告铁电 HfO 2结构中的缺陷对不同存储器件性能的影响。我们最终得到了基于HfO 2的铁电竞争性非易失性存储器件的总结和展望。
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