The size and temperature effect of ideality factor in GaN/InGaN multiple quantum wells micro-light-emitting diodes,Journal of the Society for Information Display

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The size and temperature effect of ideality factor in GaN/InGaN multiple quantum wells micro-light-emitting diodes
Journal of the Society for Information Display ( IF 1.7 ) Pub Date : 2021-06-28 , DOI: 10.1002/jsid.1070
Yibo Liu ₁ , Ke Zhang _{1,

2} , Feng Feng ₁ , Ka‐Wah Chan _{1,

3} , Sze‐Yan Yeung ₁ , Hoi‐Sing Kwok ₁ , Zhaojun Liu _{1,

2,

3}

Affiliation

In this paper, the GaN/InGaN multiple quantum wells (MQWs) micro-light-emitting diode (micro-LED) devices of different size with green light emission were fabricated. The ideality factor of micro-LED was discussed. For temperature-dependent electrical characterization, the current–voltage relationship within a temperature category of 303–573 K was measured. The contact resistance between electrodes and GaN was exhibited, and a favorable ohmic contact was achieved for p-electrode and p-GaN. Next, the temperature and size effect of ideality factor was demonstrated. All size devices showed an extremely low factor smaller than 1.9. In order to better evaluate the temperature dependence, the thermal characterization was performed with a constant current and voltage mode. The 80-μm device revealed a satisfactory temperature coefficient, namely, 1.92 mV/K at the forward voltage and 2.66 kA·K at the reverse bias. For temperature-dependent optical characterization, the irradiance and brightness from 303 to 453 K of 100 μm were demonstrated. Even at 453 K, the brightness is still favorable as 34,520 nits. Following this, the luminous efficiency droop with increasing injection current density was described and discussed.

中文翻译：

GaN/InGaN多量子阱微发光二极管中理想因子的尺寸和温度效应

在本文中，制备了具有绿色发光的不同尺寸的 GaN/InGaN 多量子阱 (MQWs) 微型发光二极管 (micro-LED) 器件。讨论了micro-LED的理想因素。对于温度相关的电气特性，测量了 303-573 K 温度范围内的电流-电压关系。电极和GaN之间的接触电阻被陈列，以及用于达到良好的欧姆接触p -电极和p-氮化镓。接下来，证明了理想因子的温度和尺寸效应。所有尺寸的设备都显示出小于 1.9 的极低系数。为了更好地评估温度依赖性，在恒定电流和电压模式下进行了热表征。80-μm 器件显示出令人满意的温度系数，即在正向电压下为 1.92 mV/K，在反向偏压下为 2.66 kA·K。对于温度相关的光学表征，证明了 303 至 453 K 的 100 μm 的辐照度和亮度。即使在 453 K 时，亮度仍为 34,520 尼特。在此之后，描述和讨论了随着注入电流密度的增加发光效率下降。

更新日期：2021-06-28

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