Formation of vanadium silicides by the interactions of vanadium with bare and oxidized Si wafers has been studied by both x‐ray diffraction and He ion backscattering techniques. X‐ray diffraction was used to identify phases and ion backscattering to profile compositional changes. In the case of V on Si, the silicide VSi2, which is a silicon‐rich phase, was found to form at temperatures from 600 to 1000 °C. In the case of V on SiO2, reactions took place only at temperatures above 800 °C, and the reaction products were identified to be V3Si, V5SI3, and V2O5. Both V3Si and V5Si3 are vandium‐rich phases, and the V3Si that we found was a continuous layer between the substrate and the other two phases, and became superconducting at about 15 °K.

中文翻译：

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通过 V 与裸硅和氧化硅晶片的相互作用形成钒硅化物

已经通过 X 射线衍射和 He 离子背散射技术研究了钒与裸硅和氧化硅晶片相互作用形成的钒硅化物。X 射线衍射用于识别相和离子背向散射以分析成分变化。在硅上的 V 的情况下，发现硅化物 VSi2 是一种富硅相，在 600 至 1000 °C 的温度下形成。在 SiO2 上的 V 的情况下，反应仅在高于 800 °C 的温度下发生，反应产物被确定为 V3Si、V5SI3 和 V2O5。V3Si 和 V5Si3 都是富钒相，我们发现的 V3Si 是衬底和其他两相之间的连续层，并在约 15 °K 时变得超导。