Alternating exposure to bis(N,N′-di-sec-butylacetamidinato)dicopper(I) and hydrogen sulfide is shown to produce high quality chalcocite (Cu2S) thin films by atomic layer deposition on silicon and fused silica substrates. The layer-by-layer chemical vapor deposition method enables conformal growth of the phase-pure material at 130 °C. X-ray diffraction reveals that polycrystalline high-chalcocite films are deposited preferentially oriented in the ⟨00l⟩ plane. The optical properties of this naturally p-type absorber compare well with previous reports on single crystals, highlighting the applicability of the technique to nanostructured photovoltaics.

中文翻译：

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Cu2S 的原子层沉积用于未来的光伏应用

研究表明，交替暴露于双（N，N'-二仲丁基乙酰氨基）二铜（I）和硫化氢可通过在硅和熔融石英基板上进行原子层沉积来产生高质量的辉铜矿 (Cu2S) 薄膜。逐层化学气相沉积方法能够在 130 °C 下保形生长相纯材料。X 射线衍射表明，多晶高辉铜矿薄膜优先沉积在 ⟨00l⟩ 平面。这种天然 p 型吸收剂的光学特性与之前关于单晶的报告相比很好，突出了该技术对纳米结构光伏的适用性。