Silicon carbide is a sound semiconductor material because of its good performance in high-voltage and high-frequency fields. However, micropipe — a special 3 dimensions defect commonly is introduced at the epitaxial growth stage — is easy to be passed to the machining stage, and deteriorates the final device performance. In the current work, we employ micromachining atomistic simulations with a single abrasive particle to evaluate whether these defects are eliminated by varying the penetration depth. The simulation results are analyzed from the aspects of structure and energy, atomistic flow field, stress distribution, and temperature; the behavior models of the finished groove are proposed. By these analyses, it is found that it seems to be impossible to completely eliminate the effect of the micropipe by adjusting the penetration depth during micromachining, based on our MD simulation cases; but 4H-SiC shows different dynamic behaviors under different penetration depths, which may be a strategy to detect or control the effect of micropipe.

碳化硅因其在高压和高频领域的良好性能而成为一种良好的半导体材料。然而，微管——一种通常在外延生长阶段引入的特殊3维缺陷——容易传递到机械加工阶段，从而降低最终器件的性能。在目前的工作中，我们使用单个磨粒进行微加工原子模拟来评估是否通过改变穿透深度来消除这些缺陷。从结构与能量、原子流场、应力分布、温度等方面对仿真结果进行了分析；提出了成品槽的行为模型。通过这些分析，根据我们的MD模拟案例发现，在微加工过程中通过调整穿透深度来完全消除微管的影响似乎是不可能的；但4H-SiC在不同穿透深度下表现出不同的动态行为，这可能是检测或控制微管效应的一种策略。