Gate-Controlled Magnetic Phase Transition in a van der Waals Magnet Fe5GeTe2,Nano Letters

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Gate-Controlled Magnetic Phase Transition in a van der Waals Magnet Fe5GeTe2
Nano Letters ( IF 9.6 ) Pub Date : 2021-06-21 , DOI: 10.1021/acs.nanolett.1c01108
Cheng Tan ₁ , Wen-Qiang Xie ₂ , Guolin Zheng ₁ , Nuriyah Aloufi ₁ , Sultan Albarakati ₁ , Meri Algarni ₁ , Junbo Li ₃ , James Partridge ₁ , Dimitrie Culcer ₄ , Xiaolin Wang _{5,

6} , Jia Bao Yi ₇ , Mingliang Tian _{3,

8,

9} , Yimin Xiong ₃ , Yu-Jun Zhao ₂ , Lan Wang ₁

Affiliation

School of Science, RMIT University, Melbourne, Victoria 3001, Australia.
Department of Physics, South China University of Technology, Guangzhou 510640, China.
Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences (CAS), Hefei 230031, Anhui, China.
School of Physics and ARC Centre of Excellence in Future Low-Energy Electronics Technologies, UNSW Node, University of New South Wales, Sydney, New South Wales 2052, Australia.
Institute for Superconducting & Electronic Materials, Australian Institute of Innovative Materials, University of Wollongong, Wollongong, New South Wales 2500, Australia.
ARC Centre for Future Low-Energy Electronics Technologies (FLEET), University of Wollongong, Wollongong, New South Wales 2500, Australia.
Global Innovative Center for Advanced Nanomaterials, School of Engineering, University of Newcastle, Callaghan, New South Wales 2308, Australia.
Department of Physics, School of Physics and Materials Science, Anhui University, Hefei 230601, Anhui, China.
Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.

Magnetic van der Waals (vdW) materials are poised to enable all-electrical control of magnetism in the two-dimensional limit. However, tuning the magnetic ground state in vdW itinerant ferromagnets by voltage-induced charge doping remains a significant challenge, due to the extremely large carrier densities in these materials. Here, by cleaving the vdW itinerant ferromagnet Fe₅GeTe₂ (F5GT) into 5.4 nm (around two unit cells), we find that the ferromagnetism (FM) in F5GT can be substantially tuned by the thickness. Moreover, by utilizing a solid protonic gate, an electron doping concentration of above 10²¹ cm^–3 has been exhibited in F5GT nanosheets. Such a high carrier accumulation exceeds that possible in widely used electric double-layer transistors (EDLTs) and surpasses the intrinsic carrier density of F5GT. Importantly, it is accompanied by a magnetic phase transition from FM to antiferromagnetism (AFM). The realization of an antiferromagnetic phase in nanosheet F5GT suggests the promise of applications in high-temperature antiferromagnetic vdW devices and heterostructures.

中文翻译：

范德华磁铁 Fe ₅ GeTe _{2 中的}门控磁相变

磁性范德华 (vdW) 材料有望在二维极限内实现磁性的全电控制。然而，由于这些材料中的载流子密度极大，通过电压感应电荷掺杂调节 vdW 流动铁磁体中的磁基态仍然是一个重大挑战。在这里，通过将 vdW 流动铁磁体 Fe ₅ GeTe ₂ (F5GT) 切割成 5.4 nm（围绕两个晶胞），我们发现 F5GT 中的铁磁性 (FM) 可以通过厚度进行显着调整。此外，通过利用固体质子门，电子掺杂浓度高于 10 ²¹ cm ^–3已在 F5GT 纳米片中展出。如此高的载流子积累超过了广泛使用的双电层晶体管（EDLT）中可能的积累，并且超过了 F5GT 的本征载流子密度。重要的是，它伴随着从 FM 到反铁磁性 (AFM) 的磁相变。纳米片 F5GT 中反铁磁相的实现表明在高温反铁磁 vdW 器件和异质结构中的应用前景。

更新日期：2021-07-14

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