在 Au (111) 薄膜基板上生长的单晶 MoS2 单层晶片,Small

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在 Au (111) 薄膜基板上生长的单晶 MoS2 单层晶片
Small ( IF 13.0 ) Pub Date : 2021-06-18 , DOI: 10.1002/smll.202100743
Jing Li _{1,

2} , Shuang Wang _{1,

2} , Qi Jiang _{1,

2} , Haoji Qian _{1,

2} , Shike Hu _{1,

2} , He Kang _{1,

2} , Chen Chen _{1,

2} , Xiaoyi Zhan ₁ , Aobo Yu _{1,

2} , Sunwen Zhao _{1,

2} , Yanhui Zhang ₁ , Zhiying Chen ₁ , Yanping Sui ₁ , Shan Qiao ₁ , Guanghui Yu _{1,

2} , Songang Peng ₃ , Zhi Jin ₃ , Xinyu Liu ₃

Affiliation

具有高结晶质量的单层过渡金属二硫属化物 (TMDC) 是下一代电子产品的重要通道材料。化学气相沉积 (CVD) 的发展加速了对 TMDC 的研究。然而，由于 TMDCs 晶格的特殊三重对称性，通常在 CVD 合成中形成反平行域和孪晶界 (GBs)。GBs的存在严重降低了TMDCs的电学和光电性能，从而限制了它们的实际应用。在此，报道了通过 CVD 在 2 英寸 c 面蓝宝石晶片上的 Au (111) 膜上外延生长单晶 MoS ₂ (SC-MoS ₂ ) 单层。MoS ₂在 Au (111) 膜上获得的域表现出单向排列，锯齿形边缘平行于 Au (111) 的 <110> 方向。实验结果表明，MoS ₂畴在Au（111）上的单向生长是温度引导的外延生长模式。高生长温度为 MoS ₂种子的旋转提供了足够的能量，以在 Au (111) 上找到最有利的取向，以实现超过 99% 的单向比率。此外，单向MoS ₂域无缝拼接成单晶单层而没有形成GBs。这项工作取得的进展将促进TMDCs在微电子领域的实际应用。

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Single-Crystal MoS2 Monolayer Wafer Grown on Au (111) Film Substrates

Monolayer transition metal dichalcogenides (TMDCs) with high crystalline quality are important channel materials for next-generation electronics. Researches on TMDCs have been accelerated by the development of chemical vapor deposition (CVD). However, antiparallel domains and twin grain boundaries (GBs) usually form in CVD synthesis due to the special threefold symmetry of TMDCs lattices. The existence of GBs severely reduces the electrical and photoelectrical properties of TMDCs, thus restricting their practical applications. Herein, the epitaxial growth of single crystal MoS₂ (SC-MoS₂) monolayer is reported on Au (111) film across a two-inch c-plane sapphire wafer by CVD. The MoS₂ domains obtained on Au (111) film exhibit unidirectional alignment with zigzag edges parallel to the <110> direction of Au (111). Experimental results indicated that the unidirectional growth of MoS₂ domains on Au (111) is a temperature-guided epitaxial growth mode. The high growth temperature provides enough energy for the rotation of the MoS₂ seeds to find the most favorable orientation on Au (111) to achieve a unidirectional ratio of over 99%. Moreover, the unidirectional MoS₂ domains seamlessly stitched into single crystal monolayer without GBs formation. The progress achieved in this work will promote the practical applications of TMDCs in microelectronics.

更新日期：2021-07-28

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