关于碳掺杂 GaN 中供体/受体补偿比的建模，以在横向 GaN 功率 HEMT 中统一再现击穿电压和电流崩溃,Micromachines

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关于碳掺杂 GaN 中供体/受体补偿比的建模，以在横向 GaN 功率 HEMT 中统一再现击穿电压和电流崩溃
Micromachines ( IF 3.0 ) Pub Date : 2021-06-16 , DOI: 10.3390/mi12060709
Nicolò Zagni ₁ , Alessandro Chini ₁ , Francesco Maria Puglisi ₁ , Paolo Pavan ₁ , Giovanni Verzellesi ₂

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用碳 (C) 杂质有意掺杂横向 GaN 功率高电子迁移率晶体管 (HEMT) 是降低缓冲电导率和增加击穿电压的常用技术。由于在 GaN 带隙中引入了陷阱能级，众所周知，这些杂质会引起色散，从而导致所谓的“电流崩塌”作为附带效应。此外，第一性原理计算和实验证据表明，C 引入了受体和供体类型的陷阱能级。在这里，我们报告了供体/受体补偿比 (CR) 的建模，即与 C 掺杂相关的供体和受体密度之间的比率，以一致且明确地再现实验击穿电压 ( V _BD ) 和电流-坍塌幅度（Δ我_抄送）。通过校准的数值器件模拟，我们确认 Δ I _CC受有效陷阱浓度（即受体和供体密度之间的差异）控制，但我们表明它是总陷阱浓度（即受体和供体密度）决定了V _BD，因此必须假设至少 50%（取决于技术）的显着 CR 来定量解释这两种现象。这项工作中提出的结果有助于澄清之前的几份报告，并且有助于对 C 掺杂横向 GaN 功率 HEMT 建模感兴趣的设备工程师。

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On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon-Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs

The intentional doping of lateral GaN power high electron mobility transistors (HEMTs) with carbon (C) impurities is a common technique to reduce buffer conductivity and increase breakdown voltage. Due to the introduction of trap levels in the GaN bandgap, it is well known that these impurities give rise to dispersion, leading to the so-called “current collapse” as a collateral effect. Moreover, first-principles calculations and experimental evidence point out that C introduces trap levels of both acceptor and donor types. Here, we report on the modeling of the donor/acceptor compensation ratio (CR), that is, the ratio between the density of donors and acceptors associated with C doping, to consistently and univocally reproduce experimental breakdown voltage (V_BD) and current-collapse magnitude (ΔI_CC). By means of calibrated numerical device simulations, we confirm that ΔI_CC is controlled by the effective trap concentration (i.e., the difference between the acceptor and donor densities), but we show that it is the total trap concentration (i.e., the sum of acceptor and donor densities) that determines V_BD, such that a significant CR of at least 50% (depending on the technology) must be assumed to explain both phenomena quantitatively. The results presented in this work contribute to clarifying several previous reports, and are helpful to device engineers interested in modeling C-doped lateral GaN power HEMTs.

更新日期：2021-06-17

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