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Electronic Phase Switching in the Negative Charge Transfer Energy SrCoOx Thin Films with the Mottronic Relevancies
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2021-06-16 , DOI: 10.1021/acsaelm.1c00290
Sourav Chowdhury 1 , Anupam Jana 1 , Arup Kumar Mandal 1 , Ram Janay Choudhary 1 , Deodatta Moreshwar Phase 1
Affiliation  

The metal–insulator transition in the negative charge transfer energy (Δ) materials is at the cutting edge for the transition-metal oxide community owing to their tremendous prospects in the Mottronic applications. We demonstrate the underlying mechanism for the Mott-switching in the thin films of negative Δ insulator SrCoO2.5 and negative Δ metal SrCoO3 systems. The control on the lowest energy charge fluctuation energetics in terms of the Coulomb repulsion U and Δ for the electronic phase switching is realized, and a comprehensive picture of the opening and closing of the band gap has been drawn experimentally in the negative Δ regime. The charge disproportionation is observed in the insulating regime, which is melted in the metallic regime of negative Δ in the SrCoOx films. From the electronic structure investigation, we have established the positions of the SrCoOx thin films in the U–Δ phase space and identified the tunable parameters for the electronic phase switching in the films. This study is fundamentally important for understanding the electronic correlation parameters controlling the lowest energy charge fluctuation energetics for the Mott-switching in the negative Δ regime, making SrCoOx thin films a promising candidate for the future Mottronic applications.

中文翻译:

负电荷转移能量 SrCoOx 薄膜中的电子相位切换与 Mottronic 相关性

由于其在 Mottronic 应用中的巨大前景,负电荷转移能 (Δ) 材料中的金属-绝缘体转变处于过渡金属氧化物群落的前沿。我们展示了负 Δ 绝缘体 SrCoO 2.5和负 Δ 金属 SrCoO 3系统薄膜中莫特开关的潜在机制。用库仑斥力U控制最低能量电荷波动能量学和 Δ 实现了电子相位切换,并在负 Δ 范围内通过实验绘制了带隙打开和关闭的综合图。在绝缘状态下观察到电荷歧化,其在 SrCoO x薄膜中的负 Δ 金属状态下熔化。通过电子结构研究,我们确定了 SrCoO x薄膜在U- Δ 相空间中的位置,并确定了薄膜中电子相切换的可调参数。这项研究对于理解控制负 Δ 区莫特开关的最低能量电荷波动能量的电子相关参数具有根本重要性,使 SrCoO x 薄膜是未来 Mottronic 应用的有希望的候选者。
更新日期:2021-07-27
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