We report high-performance ink-jet-printed 2,8-difluoro-5,11-bis(triethylsilylethynyl) anthradithiophene (diF-TESADT) organic thin-film transistors (OTFTs) facilitated by polymer blending. The film morphology and crystal structure of diF-TESADT films were greatly improved by printing on a predeposited poly(α-methyl styrene) (PαMS) layer possibly due to the confined droplet area and thus increased intermolecular interactions. Additionally, partial dewetting and the formation of irregular film shapes were effectively controlled resulting in uniform and improved device performance in the predeposited blending system. Through a proper optimization of printing parameters such as substrate temperature and processing solvent, diF-TESADT TFTs with an average field-effect mobility of 0.34±0.13 cm2 V-1 s-1 (max 0.64 cm2 V-1 s-1) and subthreshold slope of 0.456±0.090 V decade-1 have been achieved.

中文翻译：

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预沉积喷墨混合促进的高性能 2,8-二氟-5,11-双（三乙基甲硅烷基乙炔基）蒽二噻吩薄膜晶体管

我们报告了通过聚合物混合促进的高性能喷墨印刷 2,8-二氟-5,11-双（三乙基甲硅烷基乙炔基）蒽二噻吩（diF-TESADT）有机薄膜晶体管（OTFT）。通过在预沉积的聚（α-甲基苯乙烯）（PαMS）层上印刷，diF-TESADT 薄膜的薄膜形态和晶体结构得到了极大改善，这可能是由于液滴区域受限，从而增加了分子间相互作用。此外，部分去湿和不规则薄膜形状的形成得到有效控制，从而在预沉积混合系统中实现均匀和改进的器件性能。通过适当优化基板温度和处理溶剂等印刷参数，diF-TESADT TFT 的平均场效应迁移率为 0.34±0.13 cm2 V-1 s-1（最大 0.64 cm2 V-1 s-1）和亚阈值0 的斜率。