Temperature dependent electrical characteristics of GaN-on-SiC high-electron mobility transistors (HEMTs) with different backsides via layouts are presented. AlGaN/GaN HEMTs with outside backside via (OSV) and internal backside via (ISV) were processed with the same device geometry on the same wafer. HEMTs with ISV layout show a lower thermal resistance because of an extra via at the center of device. Comparisons of the device characteristics of HEMTs with OSV and ISV layouts including threshold voltage, on-resistance, and source resistance (extracted from DC measurements) and drain resistance, gate-source capacitance, gate-drain capacitance, and drain-source capacitance (extracted from RF measurements) are discussed at different temperatures. Moreover, pulsed measurements confirmed that the difference in drain current from DC measurement due to self-heating is less in the ISV layout.

中文翻译：

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具有不同背面通孔布局的 GaN-on-SiC HEMT 的热分析

介绍了具有不同背面通孔布局的 GaN-on-SiC 高电子迁移率晶体管 (HEMT) 的温度相关电气特性。具有外部背面通孔 (OSV) 和内部背面通孔 (ISV) 的 AlGaN/GaN HEMT 在同一晶片上使用相同的器件几何形状进行加工。由于器件中心有一个额外的通孔，采用 ISV 布局的 HEMT 显示出较低的热阻。HEMT 与 OSV 和 ISV 布局的器件特性的比较，包括阈值电压、导通电阻和源极电阻（从 DC 测量中提取）和漏极电阻、栅源电容、栅漏电容和漏源电容（从直流测量中提取）来自 RF 测量）在不同温度下进行讨论。而且，