Materials Science in Semiconductor Processing ( IF 4.2 ) Pub Date : 2021-06-11 , DOI: 10.1016/j.mssp.2021.106006
Rosana A. Gonçalves , Herick H. da Silva Barros , Luana S. Araujo , Erica F. Antunes , Antje Quade , Marcio D. Teodoro , Maurício R. Baldan , Olivia M. Berengue
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In this work we report on the synthesis of novel α-Sb2O4 nanostructures synthesized by a gold catalyzed vapor deposition method in which metallic Sb is used as a precursor. Belts, rods and zigzag morphologies were obtained and characterized by a group of techniques which also provided data on crystalline structure and compositional aspects. Structural characterizations revealed that although the addition of gold nanoparticles plays an important role in the final growth of the nanostructures, no evidence of this element was found in the as-grown samples. In order to clarify the causes of the suppression of the VLS mechanism in these conditions, we carried out experiments in which the syntheses were interrupted in a controlled manner. Our findings revealed that at the early stages of the growth VLS mechanism is suppressed when high levels of Sb supersaturation are reached. A thick crystalline oxide layer rapidly grows at the liquid-gas interface providing preferential sites for the VS growth to take place. Low temperature photoluminescence measurements revealed a strong emission in the visible portion of electromagnetic spectra which can be associated to the presence of oxygen vacancies in these nanostructures.
中文翻译:

通过气相沉积方法抑制 α-Sb 2 O 4纳米带生长中的汽-液-固 (VLS) 机制
在这项工作中,我们报告了新型 α-Sb 2 O 4的合成通过金催化气相沉积法合成的纳米结构,其中使用金属 Sb 作为前体。带状、棒状和锯齿形形态是通过一组技术获得并表征的,这些技术还提供了有关晶体结构和组成方面的数据。结构表征表明,虽然金纳米粒子的添加在纳米结构的最终生长中起着重要作用,但在生长的样品中没有发现这种元素的证据。为了阐明在这些条件下 VLS 机制受到抑制的原因,我们进行了以受控方式中断合成的实验。我们的研究结果表明,在生长的早期阶段,当达到高水平的 Sb 过饱和度时,VLS 机制受到抑制。厚的结晶氧化物层在液-气界面处快速生长,为 VS 生长提供了优先位置。低温光致发光测量揭示了电磁光谱的可见光部分的强发射,这可能与这些纳米结构中存在氧空位有关。