Broadband photodetectors have attracted substantial attention in recent years. The ternary chalcogenide Ta₂NiSe₅ is a layered material with a direct narrow-band gap (E_g ~ 0.33 eV) which possesses greatly potential to broadband photodetectors. Here, high-quality bulk Ta₂NiSe₅ was synthesized by Chemical Vapor Transport (CVT) method. We demonstrate a photodetector based on exfoliated Ta₂NiSe₅ nanoflake, which exhibits a broadband photo-response from 405 nm to 4300 nm. Meanwhile, its main characteristics are superior to other typical 2D materials: high responsivity ~198.1 A W⁻¹ at 1350 nm and ultrafast response time of ~27.4 µs. Long-time photocurrent reproducibility shows that the photodetector has excellent stability under atmosphere. Furthermore, the scanning photocurrent mapping reveals the photoconductive mechanism of Ta₂NiSe₅ photodetector. In addition, the anisotropic ratio of the photocurrent is ~1.46. The broadband photodetection, high responsivity, anisotropic and environmental stability achieved simultaneously in Ta₂NiSe₅ photodetector, which are promising for neotype electronics and optoelectronics field.

近年来，宽带光电探测器引起了广泛关注。三元硫族化物Ta ₂ NiSe ₅是一种具有直接窄带隙( E _g  ~ 0.33 eV)的层状材料，在宽带光电探测器方面具有很大的潜力。在这里，高质量的块状 Ta ₂ NiSe ₅是通过化学气相传输 (CVT) 方法合成的。我们展示了一种基于剥落的 Ta ₂ NiSe ₅纳米薄片的光电探测器，其表现出从 405 nm 到 4300 nm 的宽带光响应。同时，其主要特性优于其他典型的二维材料：高响应度~198.1 A W ^-1在 1350 nm 和 ~27.4 µs 的超快响应时间。长时间的光电流再现性表明该光电探测器在大气下具有优异的稳定性。此外，扫描光电流映射揭示了Ta ₂ NiSe ₅光电探测器的光电导机制。此外，光电流的各向异性比为~1.46。Ta ₂ NiSe ₅光电探测器同时实现了宽带光电探测、高响应度、各向异性和环境稳定性，在新型电子和光电子领域具有广阔的应用前景。