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Emerging 2D Memory Devices for In-Memory Computing
Advanced Materials ( IF 27.4 ) Pub Date : 2021-06-08 , DOI: 10.1002/adma.202007081 Lei Yin 1 , Ruiqing Cheng 1 , Yao Wen 1 , Chuansheng Liu 1 , Jun He 1
Advanced Materials ( IF 27.4 ) Pub Date : 2021-06-08 , DOI: 10.1002/adma.202007081 Lei Yin 1 , Ruiqing Cheng 1 , Yao Wen 1 , Chuansheng Liu 1 , Jun He 1
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It is predicted that the conventional von Neumann computing architecture cannot meet the demands of future data-intensive computing applications due to the bottleneck between the processing and memory units. To try to solve this problem, in-memory computing technology, where calculations are carried out in situ within each nonvolatile memory unit, has been intensively studied. Among various candidate materials, 2D layered materials have recently demonstrated many new features that have been uniquely exploited to build next-generation electronics. Here, the recent progress of 2D memory devices is reviewed for in-memory computing. For each memory configuration, their operation mechanisms and memory characteristics are described, and their pros and cons are weighed. Subsequently, their versatile applications for in-memory computing technology, including logic operations, electronic synapses, and random number generation are presented. Finally, the current challenges and potential strategies for future 2D in-memory computing systems are also discussed at the material, device, circuit, and architecture levels. It is hoped that this manuscript could give a comprehensive review of 2D memory devices and their applications in in-memory computing, and be helpful for this exciting research area.
中文翻译：
用于内存计算的新兴 2D 存储设备
预计传统的冯诺依曼计算架构由于处理单元和内存单元之间的瓶颈，无法满足未来数据密集型计算应用的需求。为了尝试解决这个问题，已经深入研究了在每个非易失性存储单元内原位执行计算的内存计算技术。在各种候选材料中，二维层状材料最近展示了许多新特性，这些特性已被独特地用于构建下一代电子产品。在这里，回顾了 2D 存储设备在内存计算方面的最新进展。对于每种内存配置，描述了它们的运行机制和内存特性，并权衡了它们的优缺点。随后，他们对内存计算技术的多功能应用，包括逻辑运算、电子突触和随机数生成。最后，还在材料、设备、电路和架构级别讨论了未来 2D 内存计算系统的当前挑战和潜在策略。希望这篇手稿能够对二维存储设备及其在内存计算中的应用进行全面回顾，并对这一令人兴奋的研究领域有所帮助。
更新日期：2021-07-20
中文翻译：
用于内存计算的新兴 2D 存储设备
预计传统的冯诺依曼计算架构由于处理单元和内存单元之间的瓶颈，无法满足未来数据密集型计算应用的需求。为了尝试解决这个问题，已经深入研究了在每个非易失性存储单元内原位执行计算的内存计算技术。在各种候选材料中，二维层状材料最近展示了许多新特性，这些特性已被独特地用于构建下一代电子产品。在这里，回顾了 2D 存储设备在内存计算方面的最新进展。对于每种内存配置，描述了它们的运行机制和内存特性，并权衡了它们的优缺点。随后，他们对内存计算技术的多功能应用，包括逻辑运算、电子突触和随机数生成。最后，还在材料、设备、电路和架构级别讨论了未来 2D 内存计算系统的当前挑战和潜在策略。希望这篇手稿能够对二维存储设备及其在内存计算中的应用进行全面回顾，并对这一令人兴奋的研究领域有所帮助。
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