The design and synthesis of g-C₃N₄ with favourable physical-chemical architecture are important factors in influencing its photoactivity. Herein, a phosphorus (P) vapor assisted synthetic strategy was employed to fabricate the P-doped hollow g-C₃N₄ photocatalysts with ultrathin shell structure (< 25 nm in thickness). The doping of P and the compression of shell thickness of the hollow g-C₃N₄ were induced simultaneously by the P vapor during the heating process. The as-prepared P-doped ultrathin hollow g-C₃N₄ sphere (P/UH-CNS) photocatalysts exhibited enlarged surface area and light responsive range, and improved charge transportation efficiency by suppressing the charge recombination and self-trapping within g-C₃N₄. These resulted in a high photocatalytic hydrogen evolution rate of 9653 μmol h⁻¹ g⁻¹. The charge dynamics in this P/UH-CNS system was revealed in detail by using the ultrafast time-resolved spectroscopy.

具有良好物理化学结构的gC ₃ N ₄的设计和合成是影响其光活性的重要因素。在此，采用磷 (P) 蒸气辅助合成策略来制备具有超薄壳结构（厚度 < 25 nm）的 P 掺杂空心 gC ₃ N ₄光催化剂。P的掺杂和中空gC ₃ N ₄壳厚度的压缩是在加热过程中由P蒸气同时引起的。所制备的 P 掺杂超薄空心 gC ₃ N ₄球形（P/UH-CNS）光催化剂表现出更大的表面积和光响应范围，并通过抑制 gC ₃ N ₄内的电荷复合和自陷来提高电荷传输效率。这些导致9653 μmol h ^-1 g ^-1的高光催化析氢速率。通过使用超快时间分辨光谱，详细揭示了该 P/UH-CNS 系统中的电荷动力学。