具有低介电常数和耗散因子的热稳定无色共聚酰亚胺及其有机场效应晶体管应用,ACS Applied Polymer Materials

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具有低介电常数和耗散因子的热稳定无色共聚酰亚胺及其有机场效应晶体管应用
ACS Applied Polymer Materials ( IF 4.4 ) Pub Date : 2021-06-02 , DOI: 10.1021/acsapm.1c00351
Satoshi Miyane, Chun-Kai Chen, Yan-Cheng Lin, Mitsuru Ueda, Wen-Chang Chen

我们开发了具有超低热膨胀系数 (CTE) 和足够机械耐久性的高耐热性和无色聚酰亚胺 (CPI)，可用作有机场效应晶体管 (OFET) 的柔性基板。CPIs由反式-1,4-环己基二胺（t - CHDA）与不同比例的3,3',4,4'-联苯四羧酸二酐（s-BPDA）和均苯四酸二酐（PMDA）合成。研究了 s-BPDA 和 PMDA 的组成对 CPI 的热、机械、电和光学性能的影响。具有 90 mol% s-BPDA 和 10 mol% PMDA 的优化 CPI，PI-3，显示出相对较高的断裂伸长率 (8%)，14 ppm K ^–1的低 CTE ，高玻璃化转变温度 ( T_g ) 为 340 °C，拉伸模量 ( E ) 分别为 4.1 GPa。此外，PI-3 具有高透明度，400 nm ( T ₄₀₀ ) 的透光率为81%，低截止波长 (λ _cutoff ) 为 349 nm。接下来，将DDA的二聚二胺（Priamine 1074）引入PI-3结构中以降低介电常数并增强拉伸性。例如，含有 85 mol% t- CHDA 和 15 mol% DDA 的PI-6C显示出2.8的低介电常数 ( D _k )、0.004的低损耗因数 ( D _f ) 和高T ₄₀₀86% 保持热性能和机械性能。最后，制备并表征了使用 PI-3 作为衬底和电介质的柔性 OFET 器件，并在 1000 次弯曲循环或高温加热测试后表现出出色的性能保持，表明其具有出色的耐用性。实验结果表明，所研究的 CPI 具有用于透明有机电子器件的潜在应用。

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Thermally Stable Colorless Copolyimides with a Low Dielectric Constant and Dissipation Factor and Their Organic Field-Effect Transistor Applications

We developed highly thermally resistant and colorless polyimides (CPIs) with an ultralow coefficient of thermal expansion (CTE) and sufficient mechanical durability as a flexible substrate for organic field-effect transistors (OFETs). The CPIs were synthesized from trans-1,4-cyclohexyl diamine (t-CHDA) with different ratios of 3,3′,4,4′-biphenyltetracarboxylic dianhydride (s-BPDA) and pyromellitic dianhydride (PMDA). The effects of the composition of s-BPDA and PMDA on the thermal, mechanical, electrical, and optical properties of CPIs were investigated. The optimized CPI, PI-3 with 90 mol % s-BPDA and 10 mol % PMDA, showed a relatively high elongation at break (8%) with a low CTE of 14 ppm K^–1, a high glass transition temperature (T_g) of 340 °C, and a large tensile modulus (E) of 4.1 GPa, respectively. Besides, PI-3 possessed a high transparency with a light transmittance at 400 nm (T₄₀₀) of 81% and a low cutoff wavelength (λ_cutoff) of 349 nm. Next, the dimer diamine of DDA (Priamine 1074) was introduced into the PI-3 structure to reduce the dielectric constant and enhance the stretchability. For example, PI-6C, with 85 mol % t-CHDA and 15 mol % DDA, showed a low dielectric constant (D_k) of 2.8, a low dissipation factor (D_f) of 0.004, and a high T₄₀₀ of 86% with maintained thermal and mechanical properties. Finally, a flexible OFET device using PI-3 as the substrate and dielectric was fabricated and characterized and exhibited an outstanding performance preservation after 1000 bending cycles or the high-temperature heating test, suggesting its excellent durability. The experimental results indicate that the CPIs studied have potential applications for transparent organic electronic devices.

更新日期：2021-06-11

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