Wafer-scale single-crystal graphene with strong antioxidation is fundamentally important for their applications in electronics and optoelectronics. Although significant progress has been achieved in the chemical vapor deposition (CVD) growth of graphene, the production of wafer-scale graphene with high crystalline and excellent oxidation resistance still remains a challenge. Here, we report the epitaxial growth of 6-inch single-crystal graphene on twinned Pt (111) films with in-plane rotation of 60°(T-Pt) by ambient-pressure CVD. Our results show that the CVD-grown graphene on T-Pt exhibits fast growth rate and ultrahigh stability under the high-temperature air condition (>500 °C). The density functional theory (DFT) calculations reveal that the twinned Pt(111) surface does not change the preferential orientation of graphene nucleation, leading to highly aligned graphene domains on the T-Pt substrate. Moreover, the edge growth of graphene cannot be limited by the Pt twin boundaries (TBs), which is responsible for the fast growth of graphene single crystals. This work provides a reliable route to produce wafer-size single-crystal graphene monolayers with excellent oxidation resistance and clarifies the oriented growth mechanism of graphene domains on twinned Pt substrate.

具有强抗氧化作用的晶圆级单晶石墨烯对其在电子和光电子领域的应用至关重要。尽管在石墨烯的化学气相沉积（CVD）生长方面已经取得了重大进展，但是具有高结晶度和出色的抗氧化性的晶片级石墨烯的生产仍然是一个挑战。在这里，我们报告通过环境压力CVD在平面内旋转60°（T-Pt）的孪生Pt（111）薄膜上外延生长6英寸单晶石墨烯。我们的结果表明，在高温空气条件下（> 500°C），T-Pt上的CVD生长的石墨烯表现出快速的生长速率和超高的稳定性。密度泛函理论（DFT）计算表明，孪晶Pt（111）表面不会改变石墨烯成核的优先取向，导致在T-Pt衬底上高度对齐的石墨烯结构域。此外，石墨烯的边缘生长不受Pt孪晶界（TBs）的限制，Pt孪晶界导致了石墨烯单晶的快速生长。这项工作为生产具有优异抗氧化性的晶片尺寸单晶石墨烯单层膜提供了可靠的途径，并阐明了孪晶Pt衬底上石墨烯畴的定向生长机理。