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Improved energy storage performance of PbZrO3 antiferroelectric thin films crystallized by microwave radiation
RSC Advances ( IF 3.9 ) Pub Date : 2021-5-21 , DOI: 10.1039/d1ra01203g Yin Fang 1 , Yu Bai 1 , Yi Zhuo Li 1 , Ning Liu 1 , Fan Zhang 1 , Chao Wang 1 , Zhan Jie Wang 1
RSC Advances ( IF 3.9 ) Pub Date : 2021-5-21 , DOI: 10.1039/d1ra01203g Yin Fang 1 , Yu Bai 1 , Yi Zhuo Li 1 , Ning Liu 1 , Fan Zhang 1 , Chao Wang 1 , Zhan Jie Wang 1
Affiliation
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Energy storage dielectric capacitors based on a physical charge-displacement mechanism have attracted much attention due to their high power density and fast charge–discharge characteristics. How to improve the energy storage capacity of dielectric materials has become an important emerging research topic. Here, antiferroelectric PbZrO3 films were prepared by chemical solution deposition on Pt/Ti/SiO2/Si substrates and crystallized by microwave radiation. The effects of microwave radiation on the antiferroelectric properties and energy storage performance were investigated. In contrast to ordinary heating, microwave radiation can crystallize the amorphous PbZrO3 films into the perovskite phase at 750 °C in only 180 seconds. The PbZrO3 films have a highly (100)-preferred orientation and dense microstructure, which is beneficial to enhance the stability of antiferroelectric phase and the electric breakdown strength. The PbZrO3 films show a recoverable energy storage density of 14.8 J cm−3 at 740 kV cm−1, which is approximately 40% higher than that of the PbZrO3 films crystallized by ordinary heating. The results reveal that microwave radiation is an effective method to improve energy storage performance of antiferroelectric films.
中文翻译：
微波辐射结晶 PbZrO3 反铁电薄膜的储能性能提高
基于物理电荷-位移机制的储能介质电容器由于其高功率密度和快速充放电特性而备受关注。如何提高介电材料的储能能力已成为重要的新兴研究课题。在此，通过化学溶液沉积在Pt/Ti/SiO 2 /Si 衬底上制备反铁电PbZrO 3薄膜，并通过微波辐射结晶。研究了微波辐射对反铁电性能和储能性能的影响。与普通加热相比，微波辐射可以在 750°C 下仅用 180 秒将无定形 PbZrO 3薄膜结晶成钙钛矿相。PbZrO 3薄膜具有高度优选的(100)取向和致密的微观结构，有利于提高反铁电相的稳定性和电击穿强度。PbZrO 3薄膜在740 kV cm -1下显示出14.8 J cm -3的可恢复储能密度，比通过普通加热结晶的PbZrO 3薄膜高约40%。结果表明，微波辐射是提高反铁电薄膜储能性能的有效方法。
更新日期：2021-05-22
中文翻译：
微波辐射结晶 PbZrO3 反铁电薄膜的储能性能提高
基于物理电荷-位移机制的储能介质电容器由于其高功率密度和快速充放电特性而备受关注。如何提高介电材料的储能能力已成为重要的新兴研究课题。在此，通过化学溶液沉积在Pt/Ti/SiO 2 /Si 衬底上制备反铁电PbZrO 3薄膜，并通过微波辐射结晶。研究了微波辐射对反铁电性能和储能性能的影响。与普通加热相比，微波辐射可以在 750°C 下仅用 180 秒将无定形 PbZrO 3薄膜结晶成钙钛矿相。PbZrO 3薄膜具有高度优选的(100)取向和致密的微观结构，有利于提高反铁电相的稳定性和电击穿强度。PbZrO 3薄膜在740 kV cm -1下显示出14.8 J cm -3的可恢复储能密度，比通过普通加热结晶的PbZrO 3薄膜高约40%。结果表明，微波辐射是提高反铁电薄膜储能性能的有效方法。
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