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Luminescence and Stability Enhancement of CsPbBr3 Perovskite Quantum Dots through Surface Sacrificial Coating
Advanced Optical Materials ( IF 8.0 ) Pub Date : 2021-05-18 , DOI: 10.1002/adom.202100474
Dong Huang 1 , Jun Bo 2 , Ronghong Zheng 1 , Chengzhao Luo 1 , Xiaojuan Sun 2 , Qinyi Li 1 , Dongyang Shen 1 , Zhishuai Zheng 1 , Mengyu Chen 2 , Yixing Yang 3 , Aiwei Tang 4 , Song Chen 2 , Yu Chen 1, 5
Affiliation  

All-inorganic perovskite quantum dots (QDs) have emerged as a new category of low-cost semiconducting luminescent materials for optoelectronic applications. However, their poor stability has become the main challenge that impedes their potential applications. Herein, Ni-doped CsPbBr3 QDs with lead phosphate (Pb3(PO4)2) shell through surface sacrificial coating (c-Ni-CsPbBr3) have been developed based on a modified thermal injection approach. The synergistic effect of Ni doping and Pb3(PO4)2 coating effectively improves the stability and optical performances of CsPbBr3 QDs, including photoluminescence (PL) intensity, the average lifetime, and PL quantum yield (QY). Thus, the c-Ni-CsPbBr3 QDs demonstrate the full width at half maxima (FWHM) and PLQY being 18.42 nm and 90.77%, respectively. The PL intensity of c-Ni-CsPbBr3 can be maintained at 81% of its original value after being heated at 100 °C for 1 h. No phase transformation can be observed after being stored under ambient conditions (25 °C, 60% relative humidity (RH)) for 21 days. In addition, by combining green c-Ni-CsPbBr3 QDs, red CdSe-based QDs and the blue GaN chip, a QD enhancement film (QDEF) is fabricated to form a liquid crystal display (LCD) backlit with a wide color gamut covering cover 121% of the National Television System Committee (NTSC) standard.

中文翻译:

通过表面牺牲涂层增强 CsPbBr3 钙钛矿量子点的发光和稳定性

全无机钙钛矿量子点 (QD) 已成为用于光电应用的新型低成本半导体发光材料。然而,它们的稳定性差已成为阻碍其潜在应用的主要挑战。在此,基于改进的热注入方法开发了通过表面牺牲涂层 (c-Ni-CsPbBr 3 ) 具有磷酸铅 (Pb 3 (PO 4 ) 2 ) 壳的Ni 掺杂 CsPbBr 3 QD 。Ni掺杂与Pb 3 (PO 4 ) 2涂层的协同作用有效提高了CsPbBr 3的稳定性和光学性能QD,包括光致发光 (PL) 强度、平均寿命和 PL 量子产率 (QY)。因此,c-Ni-CsPbBr 3 QD 的半峰全宽 (FWHM) 和 PLQY 分别为 18.42 nm 和 90.77%。c-Ni-CsPbBr 3的PL强度在100°C加热1小时后可保持其原始值的81%。在环境条件(25 °C,60% 相对湿度 (RH))下储存 21 天后,未观察到相变。此外,通过结合绿色 c-Ni-CsPbBr 3 QD、红色 CdSe 基 QD 和蓝色 GaN 芯片,制造 QD 增强膜 (QDEF) 以形成具有宽色域覆盖的液晶显示器 (LCD) 背光覆盖 121% 的国家电视系统委员会 (NTSC) 标准。
更新日期:2021-05-18
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