PdSe2 横向异质结二极管中的栅极控制整流方向,Advanced Electronic Materials

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PdSe2 横向异质结二极管中的栅极控制整流方向
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2021-05-13 , DOI: 10.1002/aelm.202100005
Dongwook Seo ₁ , Jae Eun Seo ₁ , Tanmoy Das _{2,

3} , Joon Young Kwak ₄ , Jiwon Chang _{2,

3}

Affiliation

二维材料的厚度相关能带结构使在同一材料平台内构建面内横向异质结成为可能。简单地形成具有不同厚度的相同 2D 材料的区域会导致界面处能带中的带偏移以完成异质结。特别是，五边形二硒化钯 (PdSe ₂ ) 由于其带隙范围从 0 到 ≈1.3 eV 的广泛可调，因此可以产生不同带隙的各种组合。在这里，一个基于PdSe ₂的栅控整流二极管通过使用剥离后的 PdSe ₂创建横向异质结来实现报道了由不同厚度区域组成的薄片。有趣的是，通过调整具有一定厚度组合的异质结结构，可以观察到独特的栅极控制整流，其中整流方向可以通过施加的栅极偏置进行调整。薄区和厚区中不同的栅极调制电平分别导致不同的能带弯曲。因此，通过栅极偏置调整异质结势垒高度可以调节主导电流的方向。可逆整流方向的演示为实现可调逻辑门中的基本组件铺平了道路。

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Gate-Controlled Rectifying Direction in PdSe2 Lateral Heterojunction Diode

The thickness-dependent band structure of 2D materials has enabled the construction of in-plane lateral heterojunction within the same material platform. Simply forming regions of the same 2D material with different thicknesses induces the band offsets in energy bands at the interface to complete the heterojunction. Especially, pentagonal palladium diselenide (PdSe₂) can create various combinations of different band gaps due to its widely tunable band gap ranging from 0 to ≈1.3 eV. Here, a PdSe₂-based gate-controlled rectifier diode realized simply by creating the lateral heterojunction using as-exfoliated PdSe₂ flake composed of different thickness regions are reported. Interestingly, by tailoring the heterojunction architecture with a certain combination of the thicknesses, a unique gate-controlled rectification can be observed where the rectifying direction can be tuned by the applied gate bias. The different gate modulation levels in the thin and thick regions leads to the different band bending, respectively. Therefore, adjusting the heterojunction barrier height by the gate bias makes it possible to modulate the direction of dominant current. The demonstration of the reversible rectifying direction paves the way for the realization of essential component in the tunable logic gate.

更新日期：2021-06-11

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