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Engineering Copper Iodide (CuI) for Multifunctional p-Type Transparent Semiconductors and Conductors
Advanced Science ( IF 14.3 ) Pub Date : 2021-05-11 , DOI: 10.1002/advs.202100546 Ao Liu 1 , Huihui Zhu 1 , Myung-Gil Kim 2 , Junghwan Kim 3 , Yong-Young Noh 1
Advanced Science ( IF 14.3 ) Pub Date : 2021-05-11 , DOI: 10.1002/advs.202100546 Ao Liu 1 , Huihui Zhu 1 , Myung-Gil Kim 2 , Junghwan Kim 3 , Yong-Young Noh 1
Affiliation
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Developing transparent p-type semiconductors and conductors has attracted significant interest in both academia and industry because metal oxides only show efficient n-type characteristics at room temperature. Among the different candidates, copper iodide (CuI) is one of the most promising p-type materials because of its widely adjustable conductivity from transparent electrodes to semiconducting layers in transistors. CuI can form thin films with high transparency in the visible light region using various low-temperature deposition techniques. This progress report aims to provide a basic understanding of CuI-based materials and recent progress in the development of various devices. The first section provides a brief introduction to CuI with respect to electronic structure, defect states, charge transport physics, and overviews the CuI film deposition methods. The material design concepts through doping/alloying approaches to adjust the optoelectrical properties are also discussed in the first section. The following section presents recent advances in state-of-the-art CuI-based devices, including transparent electrodes, thermoelectric devices, p–n diodes, p-channel transistors, light emitting diodes, and solar cells. In conclusion, current challenges and perspective opportunities are highlighted.
中文翻译：
用于多功能 p 型透明半导体和导体的工程碘化铜 (CuI)
开发透明 p 型半导体和导体引起了学术界和工业界的极大兴趣，因为金属氧化物仅在室温下表现出有效的 n 型特性。在不同的候选材料中，碘化铜 (CuI) 是最有前途的 p 型材料之一，因为它的电导率可广泛调节，从透明电极到晶体管中的半导体层。CuI可以利用各种低温沉积技术在可见光区域形成高透明度的薄膜。本进展报告旨在提供对 CuI 基材料的基本了解以及各种器件开发的最新进展。第一部分简要介绍了 CuI 的电子结构、缺陷态、电荷传输物理原理，并概述了 CuI 薄膜沉积方法。第一节还讨论了通过掺杂/合金化方法来调整光电性能的材料设计概念。以下部分介绍了最先进的 CuI 基器件的最新进展，包括透明电极、热电器件、p-n 二极管、p 沟道晶体管、发光二极管和太阳能电池。总之，强调了当前的挑战和前景机遇。
更新日期：2021-05-11
中文翻译：
用于多功能 p 型透明半导体和导体的工程碘化铜 (CuI)
开发透明 p 型半导体和导体引起了学术界和工业界的极大兴趣，因为金属氧化物仅在室温下表现出有效的 n 型特性。在不同的候选材料中，碘化铜 (CuI) 是最有前途的 p 型材料之一，因为它的电导率可广泛调节，从透明电极到晶体管中的半导体层。CuI可以利用各种低温沉积技术在可见光区域形成高透明度的薄膜。本进展报告旨在提供对 CuI 基材料的基本了解以及各种器件开发的最新进展。第一部分简要介绍了 CuI 的电子结构、缺陷态、电荷传输物理原理，并概述了 CuI 薄膜沉积方法。第一节还讨论了通过掺杂/合金化方法来调整光电性能的材料设计概念。以下部分介绍了最先进的 CuI 基器件的最新进展，包括透明电极、热电器件、p-n 二极管、p 沟道晶体管、发光二极管和太阳能电池。总之，强调了当前的挑战和前景机遇。
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