Semiconductor micro/nanostructures with broad bandgap can provide powerful candidates for fabricating ultraviolet photodetectors (PDs) due to their proper bandgap, unique optoelectronic properties, large surface-to-volume ratio and good integration. However, semiconducting micro/nanostructures suffer from low electron conductivity and abundant surface defects, which greatly limits their practical application in developing PDs. In this work, an ultraviolet PD consisting of single Ga-doped ZnO microwire (ZnO:Ga MW) and p-type poly(3,4ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) was designed. When exposed to ultraviolet illumination, the PD exhibits excellent performance (responsivity $\sim$ 185 mA/W, detectivity $\sim$ 2.4 $\times {10}^{11}$ Jones, and fast response speed of $\sim$ 212 $\mu$s for rise time and $\sim$ 387 $\mu$s for decay time) under self-driven conditions. Compared with that of an undoped ZnO MW-based PD, the responsivity and detectivity of ZnO:Ga MW/PEDOT:PSS PD are significantly enhanced over 400$\%$ and 600$\%$, respectively. Due to the incorporation of Ga element, the charge transport properties of a ZnO:Ga MW, specifically for the mobility, are effectively enhanced, which can substantially facilitate the generation, separation, transport and harvest efficiency of photo-generated carriers in the as-fabricated PD. Besides, the Ga-incorporation improves the crystalline quality of MWs and reduces surface state density, further suggesting a high-quality ZnO:Ga MW/PEDOT:PSS heterojunction. This work provides a potential approach for designing high-performance self-powered ultraviolet PDs from the aspect of enhancing carrier transport through fine doping.

具有宽禁带的半导体微/纳米结构由于其适当的禁带，独特的光电性能，大的表面体积比和良好的集成度，可以为制造紫外线光电探测器（PD）提供强大的候选材料。然而，半导体微/纳米结构具有低电子电导率和丰富的表面缺陷，这极大地限制了它们在开发局部放电方面的实际应用。在这项工作中，设计了由单根掺杂Ga的ZnO微丝（ZnO：Ga MW）和p型聚（3,4-乙撑二氧噻吩）：聚（苯乙烯磺酸盐）（PEDOT：PSS）组成的紫外线PD。当暴露于紫外线照射下，PD表现出出色的性能（响应度$〜$ 185 mA / W，检测能力 $〜$ 2.4 $\times {10}^{11}$ 琼斯，响应速度快 $〜$ 212 $\mu$s为上升时间和 $〜$ 387 $\mu$自驱动条件下的s表示衰减时间。与未掺杂的ZnO MW基PD相比，ZnO：Ga MW / PEDOT：PSS PD的响应度和检测率显着提高了400$％$ 和600$％$， 分别。由于掺入了Ga元素，ZnO：Ga MW的电荷传输特性（特别是对于迁移率）得到了有效增强，这可以大大促进光生载流子在原始状态下的生成，分离，传输和收获效率人造PD。此外，Ga的掺入改善了MWs的晶体质量并降低了表面态密度，进一步表明了高质量的ZnO：Ga MW / PEDOT：PSS异质结。从通过精细掺杂增强载流子传输的角度来看，这项工作为设计高性能自供电紫外线PD提供了一种潜在的方法。