The CrI₃ monolayer fabricated from recent experiment has attracted much attention due to its long-range FM order. However, the very low Curie temperature T_c (~45 K) severely limits its realistic application. Herein, we construct the vdW heterostructure for CrI₃ with SiC momolayer to explore improvement of magnetic properties. The detailed calculations show that the FM coupling of CrI₃ layer in heterostructure can be enhanced with T_c up to 62.3 K, which is attributed to both superexchange interaction and proximity exchange effect. Besides, intrinsically nonmagnetic SiC layer is also magnetized and holds a significant magnetic exchange splitting of valley. More importantly, the magnetic exchange energy is found to be steadily increased with the interlayer gap reduced, making T_c up to 128.8 K, and the external electric field enhances the heterostructure FM coupling as well, with Tc reaching 93.14 K. This is because the superexchange interaction and proximity exchange effect are intensified by physical field coupling on the heterostructure. We also observe that the magnetic exchange splitting of valley causes the noticeable half-metal feature upon the electric–magnetic coupling. Overall, our findings provide new strategies for improving magnetic stability of two-dimensional magnetic materials and imprinting magnetism into other nonmagnetic materials.

最近的实验制造的CrI ₃单层膜由于其长程FM级而备受关注。但是，居里温度T _c（〜45 K）非常低，严重限制了其实际应用。在这里，我们用SiC膜层构造CrI ₃的vdW异质结构，以探索磁性能的改善。详细的计算表明，利用T _c可以增强异质结构中CrI ₃层的FM耦合。高达62.3 K，这归因于超交换相互作用和邻近交换效应。此外，本质上非磁性的SiC层也被磁化，并具有明显的谷的磁交换分裂。更重要的是，发现磁交换能量随着层间间隙的减小而稳定地增加，使得T _c高达128.8 K，并且外部电场也增强了异质结构FM耦合，Tc达到93.14K。这是因为通过异质结构上的物理场耦合增强了超交换相互作用和邻近交换效果。我们还观察到，谷的磁交换分裂在电磁耦合时引起明显的半金属特征。总体而言，我们的发现为改善二维磁性材料的磁稳定性以及将磁性压印到其他非磁性材料中提供了新的策略。