Solar-blind ultraviolet (UV) photodetectors (PDs) have attracted tremendous attention in the environmental, industrial, military, and biological fields. As a representative III-nitride material, AlGaN alloys have broad development prospects in the field of solar-blind detection due to their superior properties, such as tunable wide bandgaps for intrinsic UV detection. In recent decades, a variety of AlGaN-based PDs have been developed to achieve high-precision solar-blind UV detection. As integrated optoelectronic technology advances, AlGaN-based focal plane arrays (FPAs) are manufactured and exhibit outstanding solar-blind imaging capability. Considering the rapid development of AlGaN detection techniques, this paper comprehensively reviews the progress on AlGaN-based solar-blind UV PDs and FPAs. First, the basic physical properties of AlGaN are presented. The epitaxy and p-type doping problems of AlGaN alloys are then discussed. Diverse PDs, including photoconductors and Schottky, metal–semiconductor–metal (MSM), p-i-n, and avalanche photodiodes (APDs), are demonstrated, and the physical mechanisms are analyzed to improve device performance. Additionally, this paper summarizes imaging technologies used with AlGaN FPAs in recent years. Benefiting from the development of AlGaN materials and optoelectronic devices, solar-blind UV detection technology is greeted with significant revolutions.

日盲紫外（UV）光电探测器（PD）在环境、工业、军事和生物领域引起了极大的关注。作为代表性的III族氮化物材料，AlGaN合金由于其优异的性能，如用于本征紫外检测的可调谐宽带隙等，在日盲检测领域具有广阔的发展前景。近几十年来，人们开发了多种基于AlGaN的PD来实现高精度日盲紫外检测。随着集成光电技术的进步，基于AlGaN的焦平面阵列（FPA）被制造出来并表现出出色的日盲成像能力。鉴于AlGaN检测技术的快速发展，本文全面综述了基于AlGaN的日盲UV PD和FPA的进展。首先，介绍了AlGaN的基本物理性质。然后讨论了AlGaN合金的外延和p型掺杂问题。演示了多种光电二极管，包括光电导体和肖特基、金属-半导体-金属 (MSM)、pin 和雪崩光电二极管 (APD)，并分析了物理机制以提高器件性能。此外，本文还总结了近年来 AlGaN FPA 所使用的成像技术。受益于AlGaN材料和光电器件的发展，日盲紫外检测技术迎来了重大革命。