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Highly Strain-Tunable Interlayer Excitons in MoS2/WSe2 Heterobilayers
Nano Letters ( IF 9.6 ) Pub Date : 2021-04-29 , DOI: 10.1021/acs.nanolett.1c00724 Chullhee Cho 1 , Joeson Wong 2 , Amir Taqieddin 1 , Souvik Biswas 2 , Narayana R. Aluru 1 , SungWoo Nam 1, 3 , Harry A. Atwater 2
Nano Letters ( IF 9.6 ) Pub Date : 2021-04-29 , DOI: 10.1021/acs.nanolett.1c00724 Chullhee Cho 1 , Joeson Wong 2 , Amir Taqieddin 1 , Souvik Biswas 2 , Narayana R. Aluru 1 , SungWoo Nam 1, 3 , Harry A. Atwater 2
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Interlayer excitons in heterobilayers of transition-metal dichalcogenides (TMDCs) have generated enormous interest due to their permanent vertical dipole moments and long lifetimes. However, the effects of mechanical strain on the optoelectronic properties of interlayer excitons in heterobilayers remain relatively uncharacterized. Here, we experimentally demonstrate strain tuning of Γ–K interlayer excitons in molybdenum disulfide and tungsten diselenide (MoS2/WSe2) wrinkled heterobilayers and obtain a deformation potential constant of ∼107 meV/% uniaxial strain, which is approximately twice that of the intralayer excitons in the constituent monolayers. We further observe a nonmonotonic dependence of the interlayer exciton photoluminescence intensity with strain, which we interpret as being due to the sensitivity of the Γ point to band hybridization arising from the competition between in-plane strain and out-of-plane interlayer coupling. Strain engineering with interlayer excitons in TMDC heterobilayers offers higher strain tunability and new degrees of freedom compared to their monolayer counterparts.
中文翻译：
MoS 2 / WSe 2异质双分子层中的高度可调节应变的层间激子
过渡金属二硫化氢（TMDC）异质双层中的层间激子因其永久的垂直偶极矩和长寿命而引起了人们的极大兴趣。然而，机械应变对异质双层中层间激子的光电性质的影响仍然相对不为人所知。在这里，我们在实验上证实Γ-的应变调谐ķ层间二硫化钼和二硒化钨激子（MOS 2 / WSE 2）起皱的异质双层，并获得约107 meV /％单轴应变的变形势常数，约为构成单层中层内激子的变形势常数的两倍。我们进一步观察到层间激子光致发光强度与应变的非单调依赖性，我们将其解释为归因于平面内应变与平面外层间耦合之间竞争引起的Γ点对带杂交的敏感性。与单层同类产品相比，在TMDC异质双层中使用层间激子进行应变工程设计可提供更高的应变可调性和新的自由度。
更新日期：2021-05-12
中文翻译：
MoS 2 / WSe 2异质双分子层中的高度可调节应变的层间激子
过渡金属二硫化氢（TMDC）异质双层中的层间激子因其永久的垂直偶极矩和长寿命而引起了人们的极大兴趣。然而，机械应变对异质双层中层间激子的光电性质的影响仍然相对不为人所知。在这里，我们在实验上证实Γ-的应变调谐ķ层间二硫化钼和二硒化钨激子（MOS 2 / WSE 2）起皱的异质双层，并获得约107 meV /％单轴应变的变形势常数，约为构成单层中层内激子的变形势常数的两倍。我们进一步观察到层间激子光致发光强度与应变的非单调依赖性，我们将其解释为归因于平面内应变与平面外层间耦合之间竞争引起的Γ点对带杂交的敏感性。与单层同类产品相比，在TMDC异质双层中使用层间激子进行应变工程设计可提供更高的应变可调性和新的自由度。
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