MoS₂/GaN van der Waals heterojunction is suitable for the multiband photodetection field due to the nearly lattice match and excellent response capabilities in ultraviolet and visible light regions. In this work, a multilayer MoS₂/GaN van der Waals heterojunction was grown by the chemical vapor deposition method and fabricated into an integrated ultraviolet–visible photodetector. Tensile strain was introduced on MoS₂/GaN by depositing Al₂O₃ stress liner using atomic layer deposition. Owing to the tensile strain effect, excellent detection performances were demonstrated, including a responsivity as high as 1.4 × 10⁵ A/W, a noise equivalent power of 5.63 × 10^–21 W/Hz^1/2, a normalized detectivity of 6.13 × 10²¹ jones for stress liner GaN photodetector under 280 nm illumination, and 453.3 A/W for stress liner MoS₂ photodetector under 460 nm illumination. The shortened response time of the photodetector is attributed to the improved carrier mobility and the separation of MoS₂ from air by Al₂O₃. This work has provided significant guidance for the development of integrated circuits and optical chips.

中文翻译：

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直接范德华生长在4 in。多层MoS _2上独立式GaN晶片上应变紫外可见双色光电探测器的单片集成

MoS ₂ / GaN van der Waals异质结由于在紫外和可见光区域具有几乎晶格匹配和出色的响应能力，因此适合于多波段光电检测领域。在这项工作中，通过化学气相沉积法生长了多层MoS ₂ / GaN Van der Waals异质结，并制成了集成的紫外可见光探测器。通过使用原子层沉积来沉积Al ₂ O ₃应力衬垫，在MoS ₂ / GaN上引入拉伸应变。由于拉伸应变效应，显示了出色的检测性能，包括高达1.4×10 ⁵ A / W的响应度，5.63×10 ^–21的噪声等效功率W / Hz ^1/2，在280 nm光照下对应力衬里GaN光电探测器的归一化检测灵敏度为6.13×10 ²¹琼斯，在460 nm光照下对应力衬里MoS ₂光电探测器的归一化检测灵敏度为453.3 A / W。光电探测器响应时间的缩短归因于载流子迁移率的提高以及MoS ₂通过Al ₂ O ₃与空气的分离。这项工作为集成电路和光学芯片的开发提供了重要的指导。