The large-area synthesis of high-quality MoS₂ plays an important role in realizing industrial applications of optoelectronics, nanoelectronics, and flexible devices. However, current techniques for chemical vapor deposition (CVD)-grown MoS₂ require a high synthetic temperature and a transfer process, which limits its utilization in device fabrications. Here, the direct synthesis of high-quality monolayer MoS₂ with the domain size up to 120 µm by metal-organic CVD (MOCVD) at a temperature of 320 °C is reported. Owing to the low-substrate temperature, the MOCVD-grown MoS₂ exhibits low impurity doping and nearly unstrained properties on the growth substrate, demonstrating enhanced electronic performance with high electron mobility of 68.3 cm² V⁻¹ s⁻¹ at room temperature. In addition, by tuning the precursor ratio, a better understanding of the MoS₂ growth process via a geometric model of the MoS₂ flake shape, is developed, which can provide further guidance for the synthesis of 2D materials.

中文翻译：

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高性能单层二硫化钼的低温合成

高质量MoS ₂的大面积合成对于实现光电子学、纳米电子学和柔性器件的工业应用具有重要作用。然而，目前用于化学气相沉积 (CVD) 生长的 MoS _{2 的技术}需要高合成温度和转移过程，这限制了其在器件制造中的应用。在这里，报道了通过金属有机 CVD (MOCVD) 在 320 °C 的温度下直接合成域尺寸高达 120 µm的高质量单层 MoS ₂。由于衬底温度低，MOCVD 生长的 MoS ₂在生长衬底上表现出低杂质掺杂和几乎无应变的特性，显示出增强的电子性能，在室温下具有 68.3 cm ² V ^-1 s ^{-1 的}高电子迁移率。此外，通过调整前驱体比例，可以通过 MoS ₂薄片形状的几何模型更好地理解 MoS ₂生长过程，这可以为二维材料的合成提供进一步的指导。