The NiO thin film ohmic contact to the p-type In_0.53Ga_0.47As and non-doped In_0.53Ga_0.48As was experimentally demonstrated. The ohmic contact mechanism is mainly due to the small valence band offset between the NiO and InGaAs. The NiO thin film was synthesized through thermal oxidation. The oxidation time is the key factor affecting the contact properties of the NiO/InGaAs. It is promising for the application of NiO transparent electrodes in III-V compound material-based optical-electronic devices.

中文翻译：

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透明NiO薄膜欧姆接触到p型和无意掺杂的In _0.53 Ga _0.47 As

实验证明了与p型In _0.53 Ga _0.47 As和非掺杂In _0.53 Ga _0.48 As的NiO薄膜欧姆接触。欧姆接触机制主要是由于NiO和InGaAs之间的价带偏移较小。通过热氧化合成NiO薄膜。氧化时间是影响NiO / InGaAs接触性能的关键因素。NiO透明电极在基于III-V化合物材料的光电子器件中的应用前景广阔。