Materials Science in Semiconductor Processing ( IF 4.2 ) Pub Date : 2021-04-12 , DOI: 10.1016/j.mssp.2021.105847 Siqi Han , Haiming Zhang , Rufeng Wang , Qingchen He
Carbon-based, all-inorganic CsPbIBr2 perovskite solar cells (PSCs) have demonstrated to have superior stability and low cost, combine with a simple fabrication process. However, there are two vital factors that impede enhancement of the power conversion efficiency (PCE) of PSCs. One is the low energy level alignment matching between perovskite layer and carbon electrode, and the other one is defects of the perovskite film. Here, we introduce CsPbI2Br QDs as an interface between the CsPbIBr2 layer and carbon electrode to passivate the perovskite bulk film. The surface defects and charge carrier mobility of QDs are also modified using a bidentate chelating ligand, namely 4-mercaptobenzoic acid (4-MBA). By optimizing the energy level alignment at the interface, the hole extraction is promoted, and interfacial recombination is suppressed. Compared to the PSCs without the QDs layer, the QDs-passivated PSC achieved a PCE of 6.69%, leading to an increase of almost 31.43%. Furthermore, the PSCs with QDs passivation had better water resistance. This work provides a promising strategy to enhance both the stability and efficiency of carbon-based PSCs.
中文翻译:
双齿配体修饰的CsPbI 2 Br量子点作为高性能碳基钙钛矿太阳能电池的界面
碳基全无机CsPbIBr 2钙钛矿太阳能电池(PSC)已证明具有出色的稳定性和低成本,并具有简单的制造工艺。但是,有两个至关重要的因素阻碍了PSC的功率转换效率(PCE)的提高。一种是钙钛矿层与碳电极之间的低能级配向匹配,另一种是钙钛矿膜的缺陷。在这里,我们介绍CsPbI 2 Br QD作为CsPbIBr 2之间的接口层和碳电极钝化钙钛矿块状膜。QD的表面缺陷和电荷载流子迁移率也使用双齿螯合配体,即4-巯基苯甲酸(4-MBA)进行修饰。通过优化界面处的能级排列,促进了空穴的提取,并抑制了界面复合。与没有QD层的PSC相比,QD钝化的PSC的PCE为6.69%,增加了近31.43%。此外,具有QD钝化的PSC具有更好的耐水性。这项工作为增强碳基PSC的稳定性和效率提供了一个有前途的策略。