Wafer-Scale Oxygen-Doped MoS2 Monolayer,Small Methods

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Wafer-Scale Oxygen-Doped MoS2 Monolayer
Small Methods ( IF 10.7 ) Pub Date : 2021-04-10 , DOI: 10.1002/smtd.202100091
Zheng Wei _{1,

2} , Jian Tang _{1,

2} , Xuanyi Li _{1,

2} , Zhen Chi ₁ , Yu Wang _{1,

2} , Qinqin Wang _{1,

2} , Bo Han ₃ , Na Li _{1,

2} , Biying Huang _{1,

2} , Jiawei Li _{1,

2} , Hua Yu _{1,

2} , Jiahao Yuan _{1,

2} , Hailong Chen _{1,

2} , Jiatao Sun _{1,

4} , Lan Chen _{1,

2} , Kehui Wu _{1,

2} , Peng Gao _{3,

5,

6} , Congli He ₇ , Wei Yang _{1,

2} , Dongxia Shi _{1,

2,

8} , Rong Yang _{1,

2,

9} , Guangyu Zhang _{1,

2,

8,

9}

Affiliation

Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China.
Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, China.
School of Information and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology, Beijing, 100081, China.
Interdisciplinary Institute of Light-Element Quantum Materials and Research Center for Light-Element Advanced Materials, Peking University, Beijing, 100871, China.
Collaborative Innovation Centre of Quantum Matter, Peking University, Beijing, 100871, China.
Institute of Advanced Materials, Beijing Normal University, Beijing, 100875, China.
Beijing Key Laboratory for Nanomaterials and Nanodevices, Beijing, 100190, China.
Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China.

Monolayer MoS₂ is an emergent 2D semiconductor for next-generation miniaturized and flexible electronics. Although the high-quality monolayer MoS₂ is already available at wafer scale, doping of it uniformly remains an unsolved problem. Such doping is of great importance in view of not only tailoring its properties but also facilitating many potential large-scale applications. In this work, the uniform oxygen doping of 2 in wafer-scale monolayer MoS₂ (MoS₂₋_xO_x) with tunable doping levels is realized through an in situ chemical vapor deposition process. Interestingly, ultrafast infrared spectroscopy measurements and first-principles calculations reveal a reduction of bandgaps of monolayer MoS₂₋_xO_x with increased oxygen-doping levels. Field-effect transistors and logic devices are also fabricated based on these wafer-scale MoS₂₋_xO_x monolayers, and excellent electronic performances are achieved, exhibiting promise of such doped MoS₂ monolayers.

中文翻译：

晶圆级氧掺杂二硫化钼单层

单层 MoS ₂是用于下一代小型化和柔性电子产品的新兴 2D 半导体。尽管高质量的单层 MoS ₂已经可以在晶圆级获得，但其均匀掺杂仍然是一个未解决的问题。考虑到不仅可以调整其性能，而且有助于许多潜在的大规模应用，这种掺杂非常重要。在这项工作中，通过原位化学气相沉积工艺实现了 2 在具有可调掺杂水平的晶片级单层 MoS ₂ (MoS _2-_x O _x ) 中的均匀氧掺杂。有趣的是，超快红外光谱测量和第一性原理计算揭示了单层 MoS 带隙的减小₂₋_x O _x增加氧掺杂水平。场效应晶体管和逻辑器件也基于这些晶圆级 MoS _2-_x O _x单层制造，并实现了出色的电子性能，显示出这种掺杂的 MoS ₂单层的前景。

更新日期：2021-06-10

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