A red fluorescent material, 1,3,7,9-tetrakis(4-(tert-butyl)phenyl)-5,5-difluoro-10-(2-methoxyphenyl)-5H-4l4,5l4-dipyrrolo[1,2-c:2′,1′-f][1,3,2]diazaborinine (4tBuMB), as an emitting dopant in a thermally activated delayed fluorescence (TADF) sensitized hyperfluorescence organic light-emitting diode (HFOLED) is reported. The 4tBuMB shows a high photoluminescence quantum yield (PLQY) of 99% with an emission maximum at 620 nm and a full width at half-maximum (fwhm) of 31 nm in solution. Further, it shows a deep lowest unoccupied molecular orbital (LUMO) of 3.83 eV. Thus, two TADF materials, 4CzIPN and 4CzTPN, as sensitizing hosts, are selected on the basis of a suitable LUMO level and spectrum overlap with 4tBuMB. The fabricated HFOLED device with 4CzTPN as a sensitizing host and 4tBuMB as an emitting dopant shows a maximum external quantum efficiency (EQE), an emission maximum, an fwhm, and CIE coordinates of 19.4%, 617 nm, 44 nm, and (0.64, 0.36), respectively. The electroluminance performances of the 4CzTPN sensitized device are higher than those of the 4CzIPN-based device, which is attributed to a higher Förster resonance energy transfer (FRET) rate and reduced intersystem crossing/reverse intersystem crossing (ISC/RISC) cycles of the former. Also, the 4CzTPN-based HF device shows a longer device lifetime (LT₉₀) of 954 h than the 4CzIPN-baed device (LT₉₀ of 57 h) at 3000 cd m^–2. The higher device stability is due to the higher bond dissociation energies (BDEs) of 4CzTPN and 4tBuMB than that of 4CzIPN.

中文翻译：

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一种用于纯色和使用寿命长的红色超荧光有机发光二极管的新型BODIPY材料

红色荧光物质1,3,7,9-四（4-（叔丁基）苯基）-5,5-二氟-10-（2-甲氧基苯基）-5 H -4l4,5l4-dipyrrolo [1， 2- c：2′，1′- f据报道，在热活化延迟荧光（TADF）敏化的超​​荧光有机发光二极管（HFOLED）中，作为发光掺杂剂的[] [1,3,2]二氮硼硼烷（4tBuMB）。4tBuMB在溶液中显示出99％的高光致发光量子产率（PLQY），最大发射在620 nm处，半峰全宽（fwhm）为31 nm。此外，它显示出3.83 eV的深最低的未占据分子轨道（LUMO）。因此，基于合适的LUMO能级和与4tBuMB重叠的光谱，选择了两种TADF材料4CzIPN和4CzTPN作为敏化基质。以4CzTPN作为增感主体，4tBuMB作为发射掺杂剂的HFOLED器件显示出最大外部量子效率（EQE），发射最大值，fwhm和CIE坐标分别为19.4％，617 nm，44 nm和（0.64， 0.36）。4CzTPN敏化器件的电致发光性能高于基于4CzIPN的器件，这归因于前者的较高的Förster共振能量转移（FRET）速率和减少的系统间交叉/反向系统间交叉（ISC / RISC）周期。此外，基于4CzTPN的HF设备显示出更长的设备寿命（LT在3,000 cd m ^{–2的情况下}比4CzIPN接入的设备（₉₀小时的LT ₉₀）要好954 h的₉₀）。更高的器件稳定性是由于4CzTPN和4tBuMB的键离解能（BDE）比4CzIPN的键离解能更高。