Magnetic Texture in Insulating Single Crystal High Entropy Oxide Spinel Films,ACS Applied Materials & Interfaces

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Magnetic Texture in Insulating Single Crystal High Entropy Oxide Spinel Films
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2021-04-06 , DOI: 10.1021/acsami.1c01344
Yogesh Sharma _{1,

2} , Alessandro R. Mazza ₁ , Brianna L. Musico ₃ , Elizabeth Skoropata ₁ , Roshan Nepal ₄ , Rongying Jin ₄ , Anton V. Ievlev ₅ , Liam Collins ₅ , Zheng Gai ₅ , Aiping Chen ₂ , Matthew Brahlek ₁ , Veerle Keppens ₃ , Thomas Z. Ward ₁

Affiliation

Magnetic insulators are important materials for a range of next-generation memory and spintronic applications. Structural constraints in this class of devices generally require a clean heterointerface that allows effective magnetic coupling between the insulating layer and the conducting layer. However, there are relatively few examples of magnetic insulators that can be synthesized with surface qualities that would allow these smooth interfaces and precisely tuned interfacial magnetic exchange coupling, which might be applicable at room temperature. In this work, we demonstrate an example of how the configurational complexity in the magnetic insulator layer can be used to realize these properties. The entropy-assisted synthesis is used to create single-crystal (Mg_0.2Ni_0.2Fe_0.2Co_0.2Cu_0.2)Fe₂O₄ films on substrates spanning a range of strain states. These films show smooth surfaces, high resistivity, and strong magnetic responses at room temperature. Local and global magnetic measurements further demonstrate how strain can be used to manipulate the magnetic texture and anisotropy. These findings provide insight into how precise magnetic responses can be designed using compositionally complex materials that may find application in next-generation magnetic devices.

中文翻译：

绝缘单晶高熵氧化尖晶石薄膜的磁织构

磁绝缘体是一系列下一代存储器和自旋电子应用的重要材料。这类设备中的结构约束通常需要干净的异质界面，以允许在绝缘层和导电层之间进行有效的磁耦合。但是，可以用表面质量进行合成的磁绝缘体的例子相对较少，该表面质量将允许这些光滑的界面和经过精确调整的界面磁交换耦合，这可能适用于室温。在这项工作中，我们将演示一个示例，说明如何将磁绝缘层中的配置复杂性用于实现这些属性。熵辅助合成用于生成单晶（Mg _0.2 Ni _0.2 Fe在跨越一系列应变状态的基板上的_0.2 Co _0.2 Cu _0.2）Fe ₂ O ₄膜。这些薄膜在室温下显示出光滑的表面，高电阻率和强大的磁响应。局部和整体磁测量值进一步证明了如何使用应变来操纵磁织构和各向异性。这些发现提供了关于如何使用成分复杂的材料设计精确的磁响应的见解，这些材料可能会在下一代磁设备中得到应用。

更新日期：2021-04-21

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