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Comparison of the Thermal Stress Behavior of AlN Single Crystal Growth on AlN and SiC Seeds via the Physical Vapor Transport Method through Three-Dimensional Numerical Modeling and Simulation
Crystal Growth & Design ( IF 3.2 ) Pub Date : 2021-04-02 , DOI: 10.1021/acs.cgd.0c01511 Yinting Zhao 1 , Qikun Wang 2 , Gang Zhang 1 , Jiali Huang 2 , Danyang Fu 1 , Jason Wu 2
Crystal Growth & Design ( IF 3.2 ) Pub Date : 2021-04-02 , DOI: 10.1021/acs.cgd.0c01511 Yinting Zhao 1 , Qikun Wang 2 , Gang Zhang 1 , Jiali Huang 2 , Danyang Fu 1 , Jason Wu 2
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We extend a thermal-elastic stress model by the finite element method to evaluate anisotropic three-dimensional thermal stress in AlN bulk crystals grown on on-axis 2H-AlN and 6H-SiC seeds. The distribution of stresses in the growing AlN crystals at various crystal thicknesses is simulated based on the developed model. The simulation results show that a high von Mises stress layer with strong fluctuations at the 6H-SiC/2H-AlN interface is observed for the heteroepitaxial growth, and a critical crystal thickness of 1 mm for the stress relaxation is required to avoid cracking. On the contrary, a smooth evolution of the von Mises stress is observed for the homoepitaxial growth on the 2H-AlN seed. The maximum total resolved shear stress inside the crystal when using SiC seeds is slightly higher than that of using AlN seeds at the initial growth stage, while this phenomenon reverses after the crystal thickness exceeds approximately 3 mm. Whether using AlN or SiC seeds, the magnitude of the total resolved shear stress increases steadily, and the difference between the homoepitaxial and heteroepitaxial growth is quite small during the whole bulk AlN growth by the physical vapor transport process.
中文翻译：
物理气相传输法通过三维数值建模和模拟比较AlN和SiC晶种上AlN单晶生长的热应力行为
我们通过有限元方法扩展了热弹性应力模型，以评估在2H-AlN和6H-SiC轴上生长的AlN块状晶体中的各向异性三维热应力。基于已开发的模型，模拟了各种厚度的生长的AlN晶体中的应力分布。仿真结果表明，对于异质外延生长，在6H-SiC / 2H-AlN界面处观察到具有强烈波动的高von Mises应力层，并且需要1mm的临界晶体厚度来避免应力开裂。相反，对于2H-AlN种子上的同质外延生长，观察到von Mises应力的平稳演变。在开始生长阶段，使用SiC晶种时，晶体内部最大的总分辨剪切应力略高于使用AlN晶种。而这种现象在晶体厚度超过约3 mm之后会逆转。无论使用AlN还是SiC晶种，总分解剪切应力的大小都稳定增加，并且在通过物理气相传输过程进行的整个AlN增长过程中，同质外延和异质外延生长之间的差异非常小。
更新日期：2021-05-05
中文翻译：
物理气相传输法通过三维数值建模和模拟比较AlN和SiC晶种上AlN单晶生长的热应力行为
我们通过有限元方法扩展了热弹性应力模型，以评估在2H-AlN和6H-SiC轴上生长的AlN块状晶体中的各向异性三维热应力。基于已开发的模型，模拟了各种厚度的生长的AlN晶体中的应力分布。仿真结果表明，对于异质外延生长，在6H-SiC / 2H-AlN界面处观察到具有强烈波动的高von Mises应力层，并且需要1mm的临界晶体厚度来避免应力开裂。相反，对于2H-AlN种子上的同质外延生长，观察到von Mises应力的平稳演变。在开始生长阶段，使用SiC晶种时，晶体内部最大的总分辨剪切应力略高于使用AlN晶种。而这种现象在晶体厚度超过约3 mm之后会逆转。无论使用AlN还是SiC晶种，总分解剪切应力的大小都稳定增加，并且在通过物理气相传输过程进行的整个AlN增长过程中，同质外延和异质外延生长之间的差异非常小。
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