Atomic Layer Deposition of FeSe2, CoSe2, and NiSe2,Chemistry of Materials

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Atomic Layer Deposition of FeSe2, CoSe2, and NiSe2
Chemistry of Materials ( IF 7.2 ) Pub Date : 2021-04-01 , DOI: 10.1021/acs.chemmater.0c04708
Zheng Guo ₁ , Ran Zhao ₁ , Shihan Yan ₁ , Wei Xiong ₁ , Jiahao Zhu ₁ , Ke Lu ₁ , Xinwei Wang ₁

Affiliation

Atomic layer deposition (ALD) of the iron-group transition-metal diselenides FeSe₂, CoSe₂, and NiSe₂ is reported for the first time. The ALD processes employ the associated metal amidinates as the metal precursors and diethyldiselenide (DEDSe) as the selenium precursor, together with Ar/H₂ plasma for DEDSe activation. All of the ALD processes are able to grow highly pure, smooth, and crystalline MSe₂ (M = Fe, Co, Ni) films with ideal layer-by-layer film growth behavior, which highlights good controllability over film quality and fabrication process as benefited from ALD. It is further demonstrated that all of the MSe₂ films can be uniformly deposited into 10:1 high-aspect-ratio microtrenches with excellent conformality, which underscores the great promise of these processes for conformal MSe₂ coatings on three-dimensional (3D) complex topologies in general. In situ ALD mechanism investigation further reveals that the efficient dissociation of DEDSe by plasma is key to the success of these ALD processes.

中文翻译：

FeSe ₂，CoSe ₂和NiSe _2的原子层沉积

首次报道了铁族过渡金属二硒化物FeSe ₂，CoSe ₂和NiSe _2的原子层沉积（ALD）。ALD工艺使用相关的金属mid酰胺作为金属前体，使用二乙基二硒化物（DEDSe）作为硒前体，并使用Ar / H ₂等离子体进行DEDSe活化。所有的ALD工艺都能够生长具有理想的逐层膜生长性能的高纯度，光滑且结晶的MSe ₂（M = Fe，Co，Ni）膜，这突出了对膜质量和制造工艺的良好可控性，因为受益于ALD。进一步证明，所有MSe ₂薄膜可以均匀地沉积到具有高保形性的10：1高纵横比微沟槽中，这凸显了这些方法对于一般在三维（3D）复杂拓扑上的保形MSe ₂涂层的巨大前景。原位ALD机理研究进一步揭示了等离子体对DEDSe的有效离解是这些ALD工艺成功的关键。

更新日期：2021-04-13

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