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Acceptor–Donor–Acceptor‐Type Orange–Red Thermally Activated Delayed Fluorescence Materials Realizing External Quantum Efficiency Over 30% with Low Efficiency Roll‐Off
Advanced Materials ( IF 27.4 ) Pub Date : 2021-04-01 , DOI: 10.1002/adma.202007724 Durai Karthik 1 , Young Hun Jung 1 , Hyuna Lee 1 , Soonjae Hwang 1 , Bo‐Min Seo 2 , Jun‐Yun Kim 2 , Chang Wook Han 2 , Jang Hyuk Kwon 1
Advanced Materials ( IF 27.4 ) Pub Date : 2021-04-01 , DOI: 10.1002/adma.202007724 Durai Karthik 1 , Young Hun Jung 1 , Hyuna Lee 1 , Soonjae Hwang 1 , Bo‐Min Seo 2 , Jun‐Yun Kim 2 , Chang Wook Han 2 , Jang Hyuk Kwon 1
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Two new orange–red thermally activated delayed fluorescence (TADF) materials, PzTDBA and PzDBA, are reported. These materials are designed based on the acceptor–donor–acceptor (A–D–A) configuration, containing rigid boron acceptors and dihydrophenazine donor moieties. These materials exhibit a small ΔEST of 0.05–0.06 eV, photoluminescence quantum yield (PLQY) as high as near unity, and short delayed exciton lifetime (τd) of less than 2.63 µs in 5 wt% doped film. Further, these materials show a high reverse intersystem crossing rate (krisc) on the order of 106 s−1. The TADF devices fabricated with 5 wt% PzTDBA and PzDBA as emitting dopants show maximum EQE of 30.3% and 21.8% with extremely low roll‐off of 3.6% and 3.2% at 1000 cd m−2 and electroluminescence (EL) maxima at 576 nm and 595 nm, respectively. The low roll‐off character of these materials is analyzed by using a roll‐off model and the exciton annihilation quenching rates are found to be suppressed by the fast krisc and short delayed exciton lifetime. These devices show operating device lifetimes (LT50) of 159 and 193 h at 1000 cd m−2 for PzTDBA and PzDBA, respectively. The high efficiency and low roll‐off of these materials are attributed to the good electronic properties originatng from the A–D–A molecular configuration.
中文翻译：
受主-受主-受主类型橙红热激活延迟荧光材料实现了低于30％的外部量子效率和低效率的滚降
报道了两种新的橙红色热激活延迟荧光（TADF）材料PzTDBA和PzDBA。这些材料是基于受体-供体-受体（AD-A）构型设计的，包含刚性硼受体和二氢吩嗪供体部分。这些材料显示出小的Δ ë ST 0.05-0.06电子伏特，光致发光量子产率（PLQY）高达接近统一，和短延迟激子寿命（τ d在5重量％的掺杂膜小于2.63微秒）。此外，这些材料显示出高的反向系统间交叉速率（k risc），约为10 6 s -1。用5 wt％PzTDBA和PzDBA作为发射掺杂剂制造的TADF器件在1000 cd m -2时显示最大EQE分别为30.3％和21.8％，滚降极低，分别为3.6％和3.2％，在576 nm处的电致发光（EL）最大值和595 nm。通过使用滚降模型分析了这些材料的低滚降特性，发现激子的ni灭淬灭速率受到快速的k risc和短的延迟的激子寿命的抑制。这些设备在1000 cd m -2的操作设备寿命（LT 50）为159和193 h分别用于PzTDBA和PzDBA。这些材料的高效率和低滚降归因于A–D–A分子构型产生的良好电子性能。
更新日期：2021-05-05
中文翻译：
受主-受主-受主类型橙红热激活延迟荧光材料实现了低于30％的外部量子效率和低效率的滚降
报道了两种新的橙红色热激活延迟荧光（TADF）材料PzTDBA和PzDBA。这些材料是基于受体-供体-受体（AD-A）构型设计的，包含刚性硼受体和二氢吩嗪供体部分。这些材料显示出小的Δ ë ST 0.05-0.06电子伏特，光致发光量子产率（PLQY）高达接近统一，和短延迟激子寿命（τ d在5重量％的掺杂膜小于2.63微秒）。此外，这些材料显示出高的反向系统间交叉速率（k risc），约为10 6 s -1。用5 wt％PzTDBA和PzDBA作为发射掺杂剂制造的TADF器件在1000 cd m -2时显示最大EQE分别为30.3％和21.8％，滚降极低，分别为3.6％和3.2％，在576 nm处的电致发光（EL）最大值和595 nm。通过使用滚降模型分析了这些材料的低滚降特性，发现激子的ni灭淬灭速率受到快速的k risc和短的延迟的激子寿命的抑制。这些设备在1000 cd m -2的操作设备寿命（LT 50）为159和193 h分别用于PzTDBA和PzDBA。这些材料的高效率和低滚降归因于A–D–A分子构型产生的良好电子性能。
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