利用SiO2 / HfO2叠层电介质和氧化物界面陷阱的2D MoS2电荷注入存储晶体管,Advanced Electronic Materials

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利用SiO2 / HfO2叠层电介质和氧化物界面陷阱的2D MoS2电荷注入存储晶体管
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2021-03-29 , DOI: 10.1002/aelm.202100074
Livia Janice Widiapradja ₁ , Taewook Nam _{2,

3} , Yeonsu Jeong ₁ , Hye‐Jin Jin ₁ , Yangjin Lee ₁ , Kwanpyo Kim ₁ , Sangyoon Lee ₂ , Hyungjun Kim ₂ , Heesun Bae ₁ , Seongil Im ₁

Affiliation

在具有2D半导体的先进设备中，电荷注入存储场效应晶体管（CIM FET）可能是最重要和最实用的器件之一。据报道，CIM FET通常使用三层（用于隧穿，陷阱和大体积电介质），从而产生超过10 V的高开关电压。这里，非易失性CIM FET是采用MoS ₂沟道和采用5 nm的异质堆叠双层氧化物电介质制成的。薄的SiO ₂和25 nm厚的HfO ₂，在SiO ₂ / HfO ₂处会出现电荷陷阱氧化物界面。从器件中可以很好地观察到，低于±7 V的低脉冲栅极电压足以获得编程和擦除状态，这可能是由于在异质堆叠氧化物界面处捕获的隧穿电子引起的。为了进行比较，其他CIM FET器件还制成但具有5纳米的聚苯乙烯刷/ 5纳米的HfO三层电介质₂ /25纳米的SiO ₂。可以预期的是，后者具有三层结构，至少需要±10 V的存储空间。由于具有较低的工作电压和较低的工艺复杂性，具有异质堆叠氧化物双层的前者现在被确定为最佳器件，并且已扩展到用于有机发光二极管（OLED）的长期存储器开关的电路应用中。）像素。

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2D MoS2 Charge Injection Memory Transistors Utilizing Hetero‐Stack SiO2/HfO2 Dielectrics and Oxide Interface Traps

Among advanced devices with 2D semiconductors, charge injection memory field effect transistors (CIM FETs) may be one of the most important and practical ones. Reported CIM FETs utilize three layers (for tunneling, trapping, and bulk dielectric) in general, resulting in high switching voltages over 10 V. Here, nonvolatile CIM FETs are fabricated with MoS₂ channel and hetero‐stack bilayer oxide dielectrics adopting 5 nm‐thin SiO₂ and 25 nm‐thick HfO₂, where the charge traps are expected at the SiO₂/HfO₂ oxide interface. It is nicely observed from the device that a low pulse gate voltage below ±7 V is enough to obtain program and erase states, which would originate from the tunneling electrons trapped at the hetero‐stack oxide interface. For comparison, other CIM FET devices are also fabricated but with tri‐layer dielectric of 5 nm polystyrene‐brush/5 nm HfO₂/25 nm SiO₂. Expectedly, the latter with tri‐layer requires at least ±10 V for memory operations. The former with a hetero‐stack oxide bilayer is now determined as an optimum device because of low operating voltages and less process complexity, and it is extended to a circuit application for a long‐term memory switching of an organic light‐emitting diode (OLED) pixel.

更新日期：2021-05-12

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