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A New Superconducting 3R-WS2 Phase at High Pressure
The Journal of Physical Chemistry Letters ( IF 4.8 ) Pub Date : 2021-03-26 , DOI: 10.1021/acs.jpclett.1c00312 Wenting Zhang 1 , Yuqiang Fang 2 , Zihan Zhang 1 , Fubo Tian 1 , Yanping Huang 3 , Xin Wang 1 , Xiaoli Huang 1 , Fuqiang Huang 2 , Tian Cui 1, 3
The Journal of Physical Chemistry Letters ( IF 4.8 ) Pub Date : 2021-03-26 , DOI: 10.1021/acs.jpclett.1c00312 Wenting Zhang 1 , Yuqiang Fang 2 , Zihan Zhang 1 , Fubo Tian 1 , Yanping Huang 3 , Xin Wang 1 , Xiaoli Huang 1 , Fuqiang Huang 2 , Tian Cui 1, 3
Affiliation
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High-pressure investigation has been shown to be of paramount significance for changing the conventional lattice or bringing fascinating properties, especially inducing superconducting phases. Here we studied the application of pressure to the recently synthesized 2M-WS2 with the record Tc (8.8 K) among transition metal dichalcogenides (TMDs) at ambient pressure by electrical resistance investigations, synchrotron X-ray studies, and theoretical calculations. Tc in the initial 2M-WS2 dropped from the maximum to become undetected, accompanied by a phase transition into a semiconductor, 3R-WS2, at 15 GPa. The successive metallization and superconducting transitions in 3R-WS2 were observed at 48.8 GPa with Tc ≈ 2.5 K. This is the first experimental case in which superconductivity has been realized in the 3R phase among TMDs. We propose that the degradation of superconductivity in 2M-WS2 and the reemergence of superconductivity in 3R-WS2 are mainly attributable to changes in the density of states near the Fermi surface driven by the interlayer coupling.
中文翻译：
高压下新的超导3R-WS 2相
高压研究对于改变常规晶格或带来引人入胜的性能，特别是诱导超导相具有至关重要的意义。在这里，我们通过电阻研究，同步加速器X射线研究和理论计算，研究了在环境压力下过渡金属二卤化物（TMDs）中具有记录T c（8.8 K）的新合成2M-WS 2的压力应用。初始2M-WS 2中的T c从最大值下降到未被检测到，并伴随以15 GPa的相位过渡到半导体3R-WS 2中。3R-WS中连续的金属化和超导转变2在48.8 GPA观察到具有Ť Ç ≈2.5 K.这是在其中超导已经在TMD的间的3R相位已经实现第一实验的情况。我们认为，2M-WS 2中超导性的降低和3R-WS 2中超导性的重新出现主要归因于层间耦合驱动的费米表面附近的态密度变化。
更新日期：2021-04-08
中文翻译：
高压下新的超导3R-WS 2相
高压研究对于改变常规晶格或带来引人入胜的性能，特别是诱导超导相具有至关重要的意义。在这里，我们通过电阻研究，同步加速器X射线研究和理论计算，研究了在环境压力下过渡金属二卤化物（TMDs）中具有记录T c（8.8 K）的新合成2M-WS 2的压力应用。初始2M-WS 2中的T c从最大值下降到未被检测到，并伴随以15 GPa的相位过渡到半导体3R-WS 2中。3R-WS中连续的金属化和超导转变2在48.8 GPA观察到具有Ť Ç ≈2.5 K.这是在其中超导已经在TMD的间的3R相位已经实现第一实验的情况。我们认为，2M-WS 2中超导性的降低和3R-WS 2中超导性的重新出现主要归因于层间耦合驱动的费米表面附近的态密度变化。
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