粉末材料是一类具有许多重要应用的工业材料。在某些情况下,这些材料的表面改性和功能化对于实现或增强其预期性能至关重要。然而,由于高表面积、扩散限制和颗粒团聚等一系列问题,粉末材料的有效和精确的表面改性仍然是一个挑战。原子层沉积(ALD)是一种传统用于半导体行业的尖端薄膜涂层技术。 ALD 通过气态前体和基底之间交替的饱和表面反应实现逐层薄膜生长。 ALD 表面反应的自限性提供了埃级厚度控制以及复杂结构上卓越的薄膜共形性。凭借这些优势,ALD 已成为有效制造粉末材料的强大工具,可用于微电子以外的许多领域。本综述重点介绍 ALD 在粉末材料表面工程中的独特能力,包括用于粉末制造的 ALD 反应器设计的最新进展,以及 ALD 在颗粒稳定、催化剂、含能材料、电池、吸波等领域的应用材料和药品。我们旨在展示ALD在制备各种粉末材料方面的多功能性和功效,帮助读者深入了解ALD制备粉末的原理、方法和独特效果。
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Surface modification and functionalization of powder materials by atomic layer deposition: a review
Powder materials are a class of industrial materials with many important applications. In some circumstances, surface modification and functionalization of these materials are essential for achieving or enhancing their expected performances. However, effective and precise surface modification of powder materials remains a challenge due to a series of problems such as high surface area, diffusion limitation, and particle agglomeration. Atomic layer deposition (ALD) is a cutting-edge thin film coating technology traditionally used in the semiconductor industry. ALD enables layer by layer thin film growth by alternating saturated surface reactions between the gaseous precursors and the substrate. The self-limiting nature of ALD surface reaction offers angstrom level thickness control as well as exceptional film conformality on complex structures. With these advantages, ALD has become a powerful tool to effectively fabricate powder materials for applications in many areas other than microelectronics. This review focuses on the unique capability of ALD in surface engineering of powder materials, including recent advances in the design of ALD reactors for powder fabrication, and applications of ALD in areas such as stabilization of particles, catalysts, energetic materials, batteries, wave absorbing materials and medicine. We intend to show the versatility and efficacy of ALD in fabricating various kinds of powder materials, and help the readers gain insights into the principles, methods, and unique effects of powder fabrication by ALD.