当前位置：
X-MOL 学术
›
ACS Appl. Mater. Interfaces
›
论文详情
Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
High-Performance MoS2 Photodetectors Prepared Using a Patterned Gallium Nitride Substrate
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2021-03-23 , DOI: 10.1021/acsami.0c22799 Xinke Liu 1, 2 , Shengqun Hu 1 , Zhichen Lin 1 , Xiaohua Li 1 , Lijun Song 3 , Wenjie Yu 4 , Qi Wang 5 , Wei He 1
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2021-03-23 , DOI: 10.1021/acsami.0c22799 Xinke Liu 1, 2 , Shengqun Hu 1 , Zhichen Lin 1 , Xiaohua Li 1 , Lijun Song 3 , Wenjie Yu 4 , Qi Wang 5 , Wei He 1
Affiliation
|
Strain-adjusting the band gap of MoS2 using patterned substrates to improve the photoelectric performance of MoS2 has gradually become a research hotspot in recent years. However, there are still difficulties in obtaining high-quality two-dimensional materials and preparing photodetectors on patterned substrates. To overcome this, a continuous multilayer MoS2 film was transferred to a patterned gallium nitride substrate (PGS) for the fabrication of photodetectors, and density functional theory calculations showed that the band gap of the MoS2 film increased and that the electron effective mass decreased due to the introduction of PGS. In addition, finite difference time domain simulation showed that the electric field in the MoS2 area on the PGS is enhanced compared with that on the flat gallium nitride substrate due to the enhanced light scattering effect of the PGS. The photoresponse of the MoS2/PGS photodetector at 460 nm was also enhanced, with Iph increasing by 5 times, R increasing by 2 times, NEP decreasing to 3.88 × 10–13 W/Hz1/2, and D* increasing to 5.6 × 108 Jones. Our research has important guiding significance in adjusting the band gap of MoS2 and enhancing the photoelectric performance of MoS2 photodetectors.
中文翻译：
使用图案化氮化镓衬底制备的高性能MoS 2光电探测器
使用图案化衬底来应变调节MoS 2的带隙以提高MoS 2的光电性能已逐渐成为近年来的研究热点。然而，在获得高质量的二维材料和在图案化的基板上制备光电检测器方面仍然存在困难。为了克服这个问题，将连续的多层MoS 2膜转移到图案化的氮化镓衬底（PGS）上以制造光电探测器，并且密度泛函理论计算表明MoS 2膜的带隙增加而电子有效质量降低由于引入了PGS。此外，时域有限差分仿真表明，MoS中的电场由于PGS的增强的光散射效应，与平坦的氮化镓衬底上的面积相比，PGS上的2面积增加。MoS 2 / PGS光电探测器在460 nm处的光响应也得到了增强，I ph增大了5倍，R增大了2倍，NEP减小到3.88×10 –13 W / Hz 1 / 2，D *增大到5.6×10 8琼斯。我们的研究对调节MoS 2的带隙和增强MoS 2光电探测器的光电性能具有重要的指导意义。
更新日期：2021-04-08
中文翻译：
使用图案化氮化镓衬底制备的高性能MoS 2光电探测器
使用图案化衬底来应变调节MoS 2的带隙以提高MoS 2的光电性能已逐渐成为近年来的研究热点。然而，在获得高质量的二维材料和在图案化的基板上制备光电检测器方面仍然存在困难。为了克服这个问题，将连续的多层MoS 2膜转移到图案化的氮化镓衬底（PGS）上以制造光电探测器，并且密度泛函理论计算表明MoS 2膜的带隙增加而电子有效质量降低由于引入了PGS。此外，时域有限差分仿真表明，MoS中的电场由于PGS的增强的光散射效应，与平坦的氮化镓衬底上的面积相比，PGS上的2面积增加。MoS 2 / PGS光电探测器在460 nm处的光响应也得到了增强，I ph增大了5倍，R增大了2倍，NEP减小到3.88×10 –13 W / Hz 1 / 2，D *增大到5.6×10 8琼斯。我们的研究对调节MoS 2的带隙和增强MoS 2光电探测器的光电性能具有重要的指导意义。
京公网安备 11010802027423号