高性能，经济高效的基于铜，金属，有机，纳米簇的栅极介电层的集成，适用于下一代CMOS应用,Advanced Electronic Materials

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高性能，经济高效的基于铜，金属，有机，纳米簇的栅极介电层的集成，适用于下一代CMOS应用
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2021-03-12 , DOI: 10.1002/aelm.202000835
Prachi Gupta ₁ , Rudra Kumar ₁ , Satinder K. Sharma ₁

Affiliation

金属有机框架（MOF）是否适合作为具有期望的介电常数，带隙，高质量接口，低泄漏电流和更好兼容性的未来电子逻辑设备的功能材料仍然是一个开放的挑战。由于MOFs系统具有协同互补的特性，已经通过简便的溶胶-凝胶策略合成了一种低成本的铜-金属-有机纳米簇（Cu-MOCs），其中包括无机铜金属单元和有机间甲苯酸配体。它提供了大面积的薄膜均匀性，高介电常数（κ≈5.49），改进的界面特性，具有激励场的动态切换行为，并扩展了金属有机骨架电介质的实现，从而实现了可扩展的互补金属氧化物半导体（CMOS）逻辑应用程序，而不是常规的混合对应程序。单晶X射线衍射，X射线光电子能谱，热重分析和能量色散X射线能谱等各种技术已用于验证Cu-MOC的配方。特别是，制造的Cu-MOC，金属-绝缘体-半导体结构表现出有希望的动态开关行为，响应于所施加的电场，无磁滞的电容-电压特性，低的界面陷阱密度（≈1.4×10自从进行电分析以来，自¹¹ eV ^-1 cm ^-2以来，低的有效氧化物电荷（≈1.1×10 ¹¹ cm ^-2）和值得注意的小泄漏电流密度（≈1.29nA cm ^-2 @ 1 V）。具有成本效益的新型Cu-MOC成功地展示了用于下一代CMOS逻辑器件的高性能，可靠的栅极电介质。

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Integration of High‐Performance Cost‐Effective Copper‐Metal‐Organic‐Nanocluster‐based Gate Dielectric for Next‐Generation CMOS Applications

The suitability of metal‐organic frameworks (MOFs) as functional materials for future electronic logic devices with desirable dielectric constant, bandgap, high‐quality interface, low leakage current, and better compatibility is still an open challenge. Owing to the synergistic complementary properties of MOFs systems, a low‐cost copper‐metal‐organic nanoclusters (Cu‐MOCs) has been synthesized comprising inorganic copper metal unit allied organic m‐toluic acid ligand by facile sol–gel strategy. It offers large‐area thin‐films uniformity, high dielectric constant (κ ≈ 5.49), improved interfacial properties, dynamic switching behavior with the stimuli field, and extends the realization of metal‐organic‐framework dielectric for scalable complementary‐metal‐oxide‐semiconductor (CMOS) logic applications over customary hybrid counterparts. Various techniques such as single crystal X‐ray diffraction, X‐ray photoelectron spectroscopy, thermogravimetric analysis, and energy dispersive X‐ray spectroscopy have been used to validate the Cu‐MOCs formulation. In particular, the fabricated Cu‐MOCs, metal–insulator–semiconductor structures exhibit promising dynamic switching behavior responsive to the applied field, hysteresis‐free capacitance–voltage characteristics, low interfacial trap density (≈1.4 × 10¹¹ eV⁻¹ cm⁻²), low effective oxide charges (≈1.1 × 10¹¹ cm⁻²), and noteworthy small leakage current density (≈1.29 nA cm⁻² @ 1 V) ever since in electrical analysis. Cost‐effective novel Cu‐MOCs successfully demonstrate high‐performance, reliable gate dielectrics for next‐generation CMOS logic devices.

更新日期：2021-04-09

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