Phonon anharmonicity of thermoelectric material HfTe5 studied by Raman spectroscopy,Journal of Raman Spectroscopy

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Phonon anharmonicity of thermoelectric material HfTe5 studied by Raman spectroscopy
Journal of Raman Spectroscopy ( IF 2.4 ) Pub Date : 2021-03-04 , DOI: 10.1002/jrs.6090
Qiyun Xie ₁ , Lihuan Xu ₁ , Chengxiang Hu ₁ , Limin Chen ₁ , Jiajin Zheng ₁ , Wei Wang ₂ , Handi Yin ₃ , Guofeng Cheng ₃ , Xiaoqian Ai ₄

Affiliation

The understanding of phonon–phonon anharmonic effect in HfTe₅ is essential not only for fundamental scientific interest but also for its potential thermoelectric applications. Here, rectangular ribbon‐shaped HfTe₅ single crystals have been grown. Raman spectroscopy is further utilized to investigate the phonon anharmonicity of HfTe₅ by quantifying the temperature dependence of the phonon mode softening and broadening. We focus on the temperature range from 80 up to 400 K since obvious surface oxidation occurs at higher temperatures. It is found that four phonon anharmonic effects are non‐negligible. The phonon lifetime is greatly reduced by the enhancement of phonon scattering, resulting in the low thermal conductivity in HfTe₅ single crystals.

中文翻译：

拉曼光谱研究热电材料HfTe5的声子非谐性

对HfTe _5中的声子-声子非谐效应的理解不仅对于基础科学兴趣而且对于其潜在的热电应用都是至关重要的。在这里，已经生长出矩形带状HfTe ₅单晶。拉曼光谱进一步通过量化声子模式软化和展宽的温度依赖性来研究HfTe ₅的声子非调和性。我们关注的温度范围是80至400 K，因为在较高的温度下会发生明显的表面氧化。发现四个声子非谐效应是不可忽略的。声子散射的增强极大地缩短了声子的寿命，导致HfTe _5的导热系数低单晶。

更新日期：2021-05-10

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