Flexible Transistor‐Structured Memory: Recent Process of Flexible Transistor‐Structured Memory (Small 9/2021),Small

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Flexible Transistor‐Structured Memory: Recent Process of Flexible Transistor‐Structured Memory (Small 9/2021)
Small ( IF 13.0 ) Pub Date : 2021-03-04 , DOI: 10.1002/smll.202170037
Yao Ni ₁ , Yongfei Wang ₂ , Wentao Xu ₁

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In article number 1905332, Yao Ni, Yongfei Wang, and Wentao Xu review the recent progress of flexible transistor‐structured memory (FTSM). Various FTSMs with different mechanisms and functions are elucidated, including three types of classic FTSMs based on floating‐gate, charge‐trap and ferroelectric mechanisms, as well as two kinds of special FTSMs, with optical response and synaptic plasticity, respectively. This review could help readers better understand the developing trend of this research field.

中文翻译：

灵活的晶体管结构内存：灵活的晶体管结构内存的最新过程（小9/2021）

在1905332号文章中，倪瑶，王永飞和徐文涛回顾了柔性晶体管结构存储器（FTSM）的最新进展。阐明了各种具有不同机制和功能的FTSM，包括基于浮栅，电荷陷阱和铁电机制的三种经典FTSM，以及两种分别具有光学响应和突触可塑性的特殊FTSM。这篇综述可以帮助读者更好地了解该研究领域的发展趋势。

更新日期：2021-03-04

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