A Multi-Dimensional Perspective on Electronic Doping in Metal Halide Perovskites,ACS Energy Letters

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A Multi-Dimensional Perspective on Electronic Doping in Metal Halide Perovskites
ACS Energy Letters ( IF 19.3 ) Pub Date : 2021-03-01 , DOI: 10.1021/acsenergylett.0c02476
Eric Amerling ₁ , Haipeng Lu ₂ , Bryon W. Larson ₂ , Annalise E. Maughan ₂ , Alan Phillips _{2,

3} , Evan Lafalce ₁ , Luisa Whittaker-Brooks ₁ , Joseph J. Berry ₂ , Matthew C. Beard ₂ , Z. Valy Vardeny ₁ , Jeffrey L. Blackburn ₂

Affiliation

While research on derivatives of both bulk and low-dimensional metal halide perovskite (MHP) semiconductors has grown exponentially over the past decade, the understanding and intentional applications of electronic doping have lagged behind. In this Focus Review, we take a critical look at these challenges by considering the different potential doping routes, the advantages and pitfalls of each route, and the unique properties of MHP systems that may contribute to the inherent difficulties of realizing successful electronic doping. We specifically consider low-dimensional MHP derivatives as a case study, given that the mechanistic understanding of how defect chemistry affects electronic doping has been studied less extensively in these systems than in their three-dimensional counterparts, but we also consider lessons learned from the prototypical bulk methylammonium lead iodide perovskite semiconductor to inform our discussion. We discuss the potential roles that the partially ionic nature of the chemical bonds and the soft, polarizable nature of the lattice may play in the realization of doping in MHPs, with an emphasis on defect chemistry, redox side reactions, and polaronic stabilization. Informed by relevant case studies, we illustrate lessons taken from the literature and our own experience in an effort to provide a foundation for successful electronic doping of MHPs. We conclude that the successful realization of doped MHPs will likely hinge upon careful consideration and application of doping strategies and mechanisms that have been established in both the inorganic and organic semiconductor fields over the past several decades.

中文翻译：

金属卤化物钙钛矿中电子掺杂的多维视角

在过去的十年中，尽管对块状和低维金属卤化物钙钛矿（MHP）半导体衍生物的研究呈指数增长，但对电子掺杂的理解和有意应用却落后了。在本《焦点回顾》中，我们通过考虑不同的潜在掺杂途径，每种途径的优势和缺陷以及MHP系统的独特特性来审视这些挑战，这些特性可能会助长成功实现电子掺杂的内在困难。我们特别考虑将低维MHP衍生物作为案例研究，因为在这些系统中对缺陷化学如何影响电子掺杂的机理了解比在其三维对应物中的研究要少，但是我们还考虑了从典型的块状甲基铵碘化铅钙钛矿半导体中汲取的经验教训，可以为我们的讨论提供参考。我们讨论了化学键的部分离子性质和晶格的柔软，可极化性质在实现MHP中掺杂中可能发挥的潜在作用，重点是缺陷化学，氧化还原副反应和极化稳定性。在相关案例研究的指导下，我们举例说明了从文献中汲取的教训以及我们自己的经验，以期为成功进行MHP的电子掺杂奠定基础。

更新日期：2021-03-12

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