Electron injection plays a crucial role in arousing the double‐slope characteristics for p‐type organic field‐effect transistors (OFETs) with narrow‐bandgap organic semiconductors (OSCs). This issue will not only result in the misrepresentation of OFET performance but also may cause device instability, hence impeding their further development in real‐world applications. A facile and highly efficient approach is developed to circumvent this issue by implementing modification on the electrode/organic semiconductor interface. An ultrathin layer of wide‐bandgap OSC with suitable energy levels is introduced to block the undesirable electron injection. By this means, typical double‐slope behaviors and bias stress stability in the p‐type OFETs can be significantly improved. Using 2,8‐difluoro‐5,11‐bis(triethylsilylethynyl) anthradithiophene‐based OFETs the double‐slope behaviors of as‐fabricated devices are effectively converted to near‐ideal behaviors after modification, leading to a dramatic improvement of average reliability from 65.11% to 91.76%. Furthermore, the positive drift of transfer curves under prolonged bias stress is also successfully suppressed. This strategy demonstrates good universality and can provide a new guideline for the fabrication of OFETs with ideal behaviors.

中文翻译：

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通过防止不希望的少数载流子注入来提高P型有机场效应晶体管的理想性

对于具有窄带隙有机半导体（OSC）的p型有机场效应晶体管（OFET），电子注入起着至关重要的作用。这个问题不仅会导致对OFET性能的错误描述，而且可能导致设备不稳定，从而阻碍了它们在实际应用中的进一步发展。通过在电极/有机半导体界面上进行修改，开发了一种简便而高效的方法来规避此问题。引入了具有合适能级的宽带隙OSC超薄层，以阻止不良的电子注入。通过这种方法，可以显着改善p型OFET中的典型双斜率行为和偏应力稳定性。使用2,8-二氟-5，基于11-双（三乙基甲硅烷基乙炔基）蒽噻吩的OFETs修改后，已制成的器件的双斜率行为有效地转变为接近理想的行为，从而使平均可靠性从65.11％显着提高到91.76％。此外，在延长的偏压力下传递曲线的正漂移也得到了成功抑制。该策略证明了良好的通用性，可以为具有理想行为的OFET的制造提供新的指导。