Two-dimensional (2D) graphdiyne (GDY) is a promising floating-gate material for flexible optoelectronic flash memory owing to its fascinating electrical and optical properties. However, research in GDY-based flash memory is still in its infancy owing to the huge challenge in the synthesis of large-area and ultrathin GDY films with high quality and uniformity. Here, an electric double-layer-confined strategy is proposed to synthesize a wafer-scale GDY film with thickness of 1 nm. Then, a two-terminal top-floating-gated optoelectronic memory with multibit storage capability is investigated using GDY as a photoresponsive top-floating gate. Benefiting from the excellent charge storage capability and high photoresponse of GDY, this device exhibits over 256 distinct storage levels (8 bits) with signal-to-noise ratios larger than 100. Moreover, the fully 2D material and two-terminal architecture endows the device with robust bending stability for over 1,000 bending circles, paving the way to develop wearable electronics.

二维（2D）石墨二炔（GDY）由于其令人着迷的电学和光学特性而成为一种有前景的用于柔性光电闪存的浮栅材料。然而，由于合成高质量和均一性的大面积和超薄GDY薄膜面临巨大挑战，基于GDY的闪存的研究仍处于起步阶段。在此，提出了一种电双层限制策略来合成厚度为1 nm的晶圆级GDY膜。然后，使用GDY作为光敏顶部浮置栅极，研究了具有多位存储能力的两端子顶部浮置栅极光电存储器。得益于GDY出色的电荷存储能力和高光响应性，该器件具有超过256种不同的存储级别（8位），信噪比大于100。