Doping and interface engineering are important schemes to address the variation problem which hinders the application of memristors. In this study, combination of doping and interface engineering (interfacial doping) was adopted to improve the performance of TiN/HfO₂/Pt memristors. Here, three memristors were designed to systematically investigate the effect of different interfacial Al doping on device performance. The results indicate that TiN/HfO₂/HfO₂:Al/Pt memristor shows substantially improved uniformity, cycle endurance and resistance state stability compared with the TiN/HfO₂/Pt device, while TiN/HfO₂:Al/HfO₂/Pt shows worse performance than the TiN/HfO₂/Pt device. Subsequently, different conductive filament (CF) formation/rupture mechanisms are proposed for devices with different interfacial doping. This study reveals that interfacial doping can improve the device performance of memristor greatly, but its effect on CF formation/rupture is critical.

掺杂和接口工程是解决阻碍忆阻器应用的变化问题的重要方案。在这项研究中，采用掺杂和界面工程（界面掺杂）相结合的方法来提高TiN / HfO ₂ / Pt忆阻器的性能。在这里，设计了三个忆阻器来系统地研究不同界面Al掺杂对器件性能的影响。结果表明，与TiN / HfO ₂ / Pt器件相比，TiN / HfO ₂ / HfO ₂：Al / Pt忆阻器显示出显着改善的均匀性，循环耐久性和电阻状态稳定性，而TiN / HfO ₂：Al / HfO ₂ / Pt表现出比TiN / HfO ₂更差的性能/ Pt设备。随后，针对具有不同界面掺杂的器件，提出了不同的导电丝（CF）形成/断裂机理。这项研究表明，界面掺杂可以大大提高忆阻器的器件性能，但它对CF形成/破裂的影响至关重要。