Direct imaging of electric field behavior in 2,7-diphenyl[1]benzothieno[3,2-b][1]benzothiophene organic field-effect transistors by sum-frequency generation imaging microscopy,Physical Chemistry Chemical Physics

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Direct imaging of electric field behavior in 2,7-diphenyl[1]benzothieno[3,2-b][1]benzothiophene organic field-effect transistors by sum-frequency generation imaging microscopy
Physical Chemistry Chemical Physics ( IF 2.9 ) Pub Date : 2021-2-5 , DOI: 10.1039/d0cp06407f
Chiho Katagiri _{1,

2,

3,

4} , Takayuki Miyamae _{4,

5,

6,

7,

8} , Hao Li _{9,

10,

11,

12} , Fangyuan Yang _{9,

10,

11,

12} , Steven Baldelli _{9,

10,

11,

12}

Affiliation

Sum-frequency generation imaging microscopy combined with compressive-sensing (CS-SFG) is a powerful micro-spectroscopic technique for probing interfaces and surfaces with a spatial resolution where contrast is based on the chemical functional groups. We reported the use of the CS-SFG technique to probe the electric field due to charge accumulation and the internal electric field in operating organic field-effect transistors (OFETs) with the aluminum oxide and octadecylphosphonic acid (ODPA) self-assembled monolayer as the gate dielectric layer and 2,7-diphenyl[1]benzothieno[3,2-b][1]benzothiophene (DPh-BTBT) as the semiconductor layer. In addition, the electric field behavior was discussed by a difference in the electric field induced SFG intensity between the open-circuit and the voltage application conditions. The SFG peak of CH stretching mode derived from methyl groups of ODPA and phenyl groups of DPh-BTBT could be observed at each interface of ODPA/DPh-BTBT or DPh-BTBT/Au, respectively. Moreover, the electric field induced SFG coming from ODPA/DPh-BTBT shows the presence of intense electric field due to charge injection and accumulation near the drain and source electrode edges under the operation of OFETs. Our studies show that the electric field-induced SFG imaging technique is useful for probing the local electric field distribution or charge accumulation behavior in OFETs under operating conditions.

中文翻译：

和频生成成像显微镜对2,7-二苯基[1]苯并噻吩并[3,2-b] [1]苯并噻吩有机场效应晶体管中的电场行为进行直接成像

和频生成成像显微镜与压缩感测（CS-SFG）相结合，是一种功能强大的显微光谱技术，用于探测具有空间分辨率的界面和表面，其中对比度基于化学官能团。我们报道了CS-SFG技术的使用，以探测由于氧化铝和十八烷基膦酸（ODPA）自组装单层作为工作层的有机场效应晶体管（OFET）中电荷积累和内部电场引起的电场。栅介电层和2,7-二苯基[1]苯并噻吩并[3,2- b] [1]苯并噻吩（DPh-BTBT）作为半导体层。另外，通过开路和电压施加条件之间的电场感应SFG强度差异来讨论电场行为。在ODPA / DPh-BTBT或DPh-BTBT / Au的每个界面上分别可以观察到ODPA的甲基和DPh-BTBT的苯基衍生的CH拉伸模式的SFG峰。此外，来自ODPA / DPh-BTBT的电场感应SFG显示出在OFET的操作下，由于电荷注入和在漏极和源极电极边缘附近的蓄积，存在强电场。我们的研究表明，电场诱导的SFG成像技术可用于探测工作条件下OFET中的局部电场分布或电荷积累行为。

更新日期：2021-02-23

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