In this paper, a thermally crosslinkable 9,9-Bis[4-[(4-ethenylphenyl)methoxy]phenyl]-N2,N7-di-1-naphthalenyl-N2,N7-diphenyl-9H-fluorene-2,7-diamine (VB-FNPD) film served as the hole transporting layer (HTL) of perovskite CsPbBr3 quantum-dot light-emitting diodes (QD-LEDs) was investigated and reported. The VB-FNPD film crosslinked at various temperatures in the range of 100~230 °C followed by a spin-coating process to improve their chemical bonds in an attempt to resist the erosion from the organic solvent in the remaining fabrication process. It is shown that the device with VB-FNPD HTL crosslinking at 170 °C has the highest luminance of 7702 cd/m2, the maximum current density (J) of 41.98 mA/cm2, the maximum current efficiency (CE) of 5.45 Cd/A, and the maximum external quantum efficiency (EQE) of 1.64%. Our results confirm that the proposed thermally crosslinkable VB-FNPD is a candidate for the HTL of QD-LEDs.

中文翻译：

---

使用可热交联的空穴传输层改善钙钛矿CsPbBr3量子点发光二极管的界面特性

在本文中，可热交联的9,9-双[4-[（（4-乙烯基苯基）甲氧基]苯基] -N2，N7-二-1-萘基-N2，N7-二苯基-9H-芴-2,7-研究并报道了作为钙钛矿CsPbBr3量子点发光二极管（QD-LED）的空穴传输层（HTL）的二胺（VB-FNPD）膜。VB-FNPD薄膜在100〜230°C的各种温度下交联，然后进行旋涂工艺以改善其化学键，从而在剩余的制造过程中尝试抵抗有机溶剂的侵蚀。结果表明，在170°C下进行VB-FNPD HTL交联的器件的最高亮度为7702 cd / m2，最大电流密度（J）为41.98 mA / cm2，最大电流效率（CE）为5.45 Cd / A，并且最大外部量子效率（EQE）为1.64％。